Datasheet
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014
www.vishay.com
Vishay Siliconix
S13-0168-Rev. D, 04-Feb-13
2
Document Number: 91277
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
- - 110
°C/W
Maximum Junction-to-Ambient
(PCB Mount)
a
R
thJA
--50
Maximum Junction-to-Case (Drain) R
thJC
--5.0
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= - 250 μA - 60 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= - 1 mA - - 0.059 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 μA - 2.0 - - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= - 60 V, V
GS
= 0 V - - - 100
μA
V
DS
= - 48 V, V
GS
= 0 V, T
J
= 125 °C - - - 500
Drain-Source On-State Resistance R
DS(on)
V
GS
= - 10 V I
D
= - 3.1 A
b
- - 0.50
Forward Transconductance g
fs
V
DS
= - 25 V, I
D
= - 3.1 A
b
1.4 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
- 270 -
pFOutput Capacitance C
oss
- 170 -
Reverse Transfer Capacitance C
rss
-31-
Total Gate Charge Q
g
V
GS
= - 10 V
I
D
= - 6.7 A, V
DS
= - 48 V,
see fig. 6 and 13
b
--12
nC Gate-Source Charge Q
gs
--3.8
Gate-Drain Charge Q
gd
--5.1
Turn-On Delay Time t
d(on)
V
DD
= - 30 V, I
D
= - 6.7 A,
R
g
= 24 , R
D
= 4.0 , see fig. 10
b
-11-
ns
Rise Time t
r
-63-
Turn-Off Delay Time t
d(off)
-9.6-
Fall Time t
f
-31-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
c
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--- 5.1
A
Pulsed Diode Forward Current
a
I
SM
--- 20
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= - 5.1 A, V
GS
= 0 V
b
--- 5.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= - 6.7 A, dI/dt = 100 A/μs
b
- 80 160 ns
Body Diode Reverse Recovery Charge Q
rr
- 0.096 0.19 μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G