Datasheet

ManualsBrandsVISHAY ManualsFETsIRFR1N60APBF, MOSFET

IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A

www.vishay.com

Vishay Siliconix

S13-0171-Rev. D, 04-Feb-13

Document Number: 91267

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Power MOSFET

FEATURES

• Low Gate Charge Q

Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic

dV/dt Ruggedness

• Fully Characterized Capacitance and

Avalanche Voltage and Current

• Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• Power Factor Correction

TYPICAL SMPS TOPOLOGIES

• Low Power Single Transistor Flyback

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 95 mH, R

= 25 , I

= 1.4 A (see fig. 12).

c. I

 1.4 A, dI/dt  180 A/μs, V

 V

, T

 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 600

DS(on)

(Max.) ()V

= 10 V 7.0

(Max.) (nC) 14

(nC) 2.7

(nC) 8.1

Configuration Single

N-Channel MOSFET

DPAK

(TO-252)

IPAK

(TO-251)

ORDERING INFORMATION

Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)

Lead (Pb)-free and

Halogen-free

SiHFR1N60A-GE3 SiHFR1N60ATRL-GE3

SiHFR1N60ATR-GE3

SiHFR1N60ATRR-GE3

SiHFU1N60A-GE3

Lead (Pb)-free

IRFR1N60APbF IRFR1N60ATRLPbF

IRFR1N60ATRPbF

IRFR1N60ATRRPbF

IRFU1N60APbF

SiHFR1N60A-E3 SiHFR1N60ATL-E3

SiHFR1N60AT-E3

SiHFR1N60ATR-E3

SiHFU1N60A-E3

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

600

Gate-Source Voltage V

± 30

Continuous Drain Current V

at 10 V

= 25 °C

1.4

= 100 °C 0.89

Pulsed Drain Current

5.6

Linear Derating Factor 0.28 W/°C

Single Pulse Avalanche Energy

93 mJ

Repetitive Avalanche Current

1.4 A

Repetitive Avalanche Energy

3.6 mJ

Maximum Power Dissipation T

= 25 °C P

36 W

Peak Diode Recovery dV/dt

dV/dt 3.8 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s 300

Summary of content (11 pages)

PAGE 1
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 600 RDS(on) (Max.) () VGS = 10 V 7.0 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 8.
PAGE 2
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 110 Maximum Junction-to-Ambient (PCB Mount)a RthJA - 50 Maximum Junction-to-Case (Drain) RthJC - 3.5 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 1 0.1 4.5V 20μs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 100 TJ = 150 ° C 1 TJ = 25 ° C 0.1 4.0 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) 1 4.
PAGE 4
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com 10 V GS = 0V, f = 1MHz C iss = C gs + C gd, C dsSHORTED C rss = C gd C oss = C ds + C gd ISD , Reverse Drain Current (A) C, Capacitance (pF) 10000 Vishay Siliconix 1000 C iss 100 C oss 10 TJ = 150 ° C 1 TJ = 25 ° C Crss 1 0.1 0.4 A 1 10 100 1000 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 1.2 Fig.
PAGE 5
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix 1.6 RD VDS VGS D.U.T. ID , Drain Current (A) Rg + - VDD 1.2 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 0.8 Fig. 10a - Switching Time Test Circuit VDS 0.4 90 % 0.0 25 50 75 100 125 150 10 % VGS TC , Case Temperature ( ° C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 PDM 0.02 0.
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IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix 200 ID TOP 0.65A 0.9A BOTTOM 1.4A 160 120 80 40 0 25 50 75 100 125 150 770 V DSav , Avalanche Voltage (V) EAS , Single Pulse Avalanche Energy (mJ) www.vishay.com 750 730 710 690 670 0.0 A 0.4 1.2 1.6 I av , Avalanche Current (A) Starting TJ , Junction Temperature ( °C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current 0.8 Fig. 12d - Basic Gate Charge Waveform Current regulator Same type as D.U.T.
PAGE 7
IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T.
PAGE 8
Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.
PAGE 9
Package Information Vishay Siliconix TO-251AA (HIGH VOLTAGE) 4 3 E1 E Thermal PAD 4 b4 θ2 4 A 0.010 0.25 M C A B L2 4 c2 A θ1 B D D1 A C 3 Seating plane 5 C L1 L3 (Datum A) C L B B A A1 3 x b2 View A - A 2xe c 3xb 0.010 0.25 M C A B Plating 5 b1, b3 Base metal Lead tip c1 (c) 5 (b, b2) Section B - B and C - C MILLIMETERS DIM. MIN. MAX. INCHES MIN. MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 - A1 0.89 1.
PAGE 10
Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.
PAGE 11
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