Datasheet

Document Number: 91263 www.vishay.com
S-81432-Rev. A, 07-Jul-08 3
IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--7.7
A
Pulsed Diode Forward Current
a
I
SM
--31
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 7.7 A, V
GS
= 0 V
b
--1.6V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 10 A, dI/dt = 100 A/µs
b
-70140ns
Body Diode Reverse Recovery Charge Q
rr
- 0.20 0.40 µC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
S
D
G