Datasheet

www.vishay.com Document Number: 91263
2 S-81432-Rev. A, 07-Jul-08
IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 924 µH, R
G
= 25 Ω, I
AS
= 7.7 A (see fig. 12).
c. I
SD
≤ 10 A, dI/dt ≤ 90 A/µs, V
DD
≤ V
DS
, T
J
≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 260
d
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
- - 110
°C/W
Maximum Junction-to-Ambient
(PCB Mount)
a
R
thJA
--50
Maximum Junction-to-Case (Drain) R
thJC
--5.0
ABSOLUTE MAXIMUM RATINGS T
C
= 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA 60 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.068 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 2.0 - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 60 V, V
GS
= 0 V - - 25
µA
V
DS
= 48 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 4.6 A
b
- - 0.20 Ω
Forward Transconductance g
fs
V
DS
= 25 V, I
D
= 4.6 A 2.4 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 300 -
pFOutput Capacitance C
oss
- 160 -
Reverse Transfer Capacitance C
rss
-29-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 10 A, V
DS
= 48 V,
see fig. 6 and 13
b
--11
nC Gate-Source Charge Q
gs
--3.1
Gate-Drain Charge Q
gd
--5.8
Turn-On Delay Time t
d(on)
V
DD
= 30 V, I
D
= 10 A,
R
G
= 24 Ω, R
D
= 2.7 Ω, see fig. 10
b
-10-
ns
Rise Time t
r
-50-
Turn-Off Delay Time t
d(off)
-13-
Fall Time t
f
-19-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
c
-4.5-
nH
Internal Source Inductance L
S
-7.5-
D
S
G