Datasheet

Document Number: 91262 www.vishay.com
S11-0112-Rev. C, 31-Jan-11 1
Power MOSFET
IRFPS43N50K, SiHFPS43N50K
Vishay Siliconix
FEATURES
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
•Low R
DS(on)
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 0.82 mH, R
g
= 25 , I
AS
= 47 A (see fig. 12c).
c. I
SD
 47 A, dI/dt  230 A/μs, V
DD
 V
DS
, T
J
 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 500
R
DS(on)
()V
GS
= 10 V 0.078
Q
g
(Max.) (nC) 350
Q
gs
(nC) 85
Q
gd
(nC) 180
Configuration Single
N-Channel MOSFET
G
D
S
G
D
S
Super-247
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
Super-247
Lead (Pb)-free
IRFPS43N50KPbF
SiHFPS43N50K-E3
SnPb
IRFPS43N50K
SiHFPS43N50K
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
500
V
Gate-Source Voltage V
GS
± 30
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
47
AT
C
= 100 °C 29
Pulsed Drain Current
a
I
DM
190
Linear Derating Factor 4.3 W/°C
Single Pulse Avalanche Energy
b
E
AS
910 mJ
Repetitive Avalanche Current
a
I
AR
47 A
Repetitive Avalanche Energy
a
E
AR
54 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
540 W
Peak Diode Recovery dV/dt
c
dV/dt 9.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
* Pb containing terminations are not RoHS compliant, exemptions may apply