Datasheet

www.vishay.com Document Number: 91260
4 S11-0111-Rev. C, 07-Feb-11
IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Output Capacitance Stored Energy vs. V
DS
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Typical Source Drain Diode Forward Voltage
1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
1000000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 100 200 300 400 500 600
V
DS,
Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
35
40
E
n
e
r
g
y
(
µ
J
)
0 100 200 300 400
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
47A
V = 100V
DS
V = 250V
DS
V = 400V
DS
0.1
1
10
100
1000
0.2 0.7 1.2 1.7 2.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°