Datasheet

www.vishay.com Document Number: 91260
2 S11-0111-Rev. C, 07-Feb-11
IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
Note
a. R
th
is measured at T
J
approximately 90 °C.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  400 μs; duty cycle  2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
C
oss
eff. (ER) is a fixed capacitance that stores the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
a
R
thJA
-40
°C/W
Case-to-Sink, Flat, Greased Surface
R
thCS
0.24 -
Maximum Junction-to-Case (Drain)
a
R
thJC
-0.23
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 μA
500 - -
V
V
DS
Temperature Coefficient
V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA
-0.60-
V/°C
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA
3.0 -
5.0
V
Gate-Source Leakage
I
GSS
V
GS
= ± 30 V - - ± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 500 V, V
GS
= 0 V
--
50
μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
--
2.0 mA
Drain-Source On-State Resistance
R
DS(on)
V
GS
= 10 V I
D
= 28 A
b
- 0.087 0.100 
Forward Transconductance
g
fs
V
DS
= 50 V, I
D
= 46 A 21 - - S
Dynamic
Input Capacitance
C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 8110 -
pF
Output Capacitance
C
oss
- 960 -
Reverse Transfer Capacitance
C
rss
- 130 -
Output Capacitance
C
oss
V
GS
= 0 V
V
DS
= 1.0 V , f = 1.0 MHz
- 11200 -
V
DS
= 400 V , f = 1.0 MHz
- 240 -
Effective Output Capacitance
C
oss
eff.
V
DS
= 0 V to 400 V
c
- 440 -
Effective Output Capacitance
(Energy Related)
C
oss eff.
(ER)
- 310 -
Total Gate Charge
Q
g
V
GS
= 10 V
I
D
= 46 A, V
DS
= 400 V,
see fig. 7 and 15
b
--
380
nC
Gate-Source Charge
Q
gs
--
80
Gate-Drain Charge
Q
gd
--
190
Internal Gate Resistance R
G
f = 1 MHz, open drain - 0.90 - 
Turn-On Delay Time
t
d(on)
V
DD
= 250 V, I
D
= 46 A,
R
G
= 0.85 , V
GS
= 10 V,
see fig. 14a and 14b
b
-27-
ns
Rise Time
t
r
- 170 -
Turn-Off Delay Time
t
d(off)
-50-
Fall Time
t
f
-69-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--46
A
Pulsed Diode Forward Current
a
I
SM
- - 180
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 46 A, V
GS
= 0 V
b
--1.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 46 A - 170 250
ns
T
J
= 125 °C, dI/dt = 100 A/μs
b
- 220 330
Body Diode Reverse Recovery Charge Q
rr
T
J
= 25 °C, I
S
= 46 A, V
GS
= 0 V
b
- 705 1060
nC
T
J
= 125 °C, dI/dt = 100 A/μs
b
-1.32.0
Reverse Recovery Current I
RRM
T
J
= 25 °C - 9.0 - A
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G