Datasheet

ManualsBrandsVISHAY ManualsFETsIRFPS37N50APBF, MOSFET

Document Number: 91258 www.vishay.com

S11-0111-Rev. C, 07-Feb-11 1

Power MOSFET

IRFPS37N50A, SiHFPS37N50A

Vishay Siliconix

FEATURES

• Low Gate Charge Q

Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Effective C

oss

Specified

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Full Bridge Converters

• Power Factor Correction Boost

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 1.94 mH, R

= 25 , I

= 36 A (see fig. 12).

c. I

 36 A, dI/dt  145 A/μs, V

 V

, T

 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 500

DS(on)

(Max.) ()V

= 10 V 0.13

(Max.) (nC) 180

(nC) 46

(nC) 71

Configuration Single

N-Channel MOSFET

Super-247

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

Super-247

Lead (Pb)-free

IRFPS37N50APbF

SiHFPS37N50A-E3

SnPb

IRFPS37N50A

SiHFPS37N50A

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

500

Gate-Source Voltage V

± 30

Continuous Drain Current V

at 10 V

= 25 °C

= 100 °C 23

Pulsed Drain Current

144

Linear Derating Factor 3.6 W/°C

Single Pulse Avalanche Energy

1260 mJ

Repetitive Avalanche Current

36 A

Repetitive Avalanche Energy

44 mJ

Maximum Power Dissipation T

= 25 °C P

446 W

Peak Diode Recovery dV/dt

dV/dt 3.5 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) () VGS = 10 V 0.13 Qg (Max.
PAGE 2
IRFPS37N50A, SiHFPS37N50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.28 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 500 VGS(th) VDS = VGS, ID = 250 μA 2.0 - - V - 4.
PAGE 3
IRFPS37N50A, SiHFPS37N50A Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) 100 10 4.5V 1 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 100 1 10 I D , Drain-to-Source Current (A) TJ = 150 ° C TJ = 25 ° C 10 100 V DS = 50V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 VDS , Drain-to-Source Voltage (V) VGS , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics Fig.
PAGE 4
IRFPS37N50A, SiHFPS37N50A Vishay Siliconix 1000 V GS = 0V, f = 1MHz C iss = C gs + C gd, C dsSHORTED C rss = C gd C oss = C ds + C gd ISD , Reverse Drain Current (A) C, Capacitance (pF) 100000 10000 100 C iss 1000 C oss 100 TJ = 150 ° C 10 TJ = 25 ° C 1 Crss 10 A 1 10 100 0.1 0.2 1000 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 VDS , Drain-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig.
PAGE 5
IRFPS37N50A, SiHFPS37N50A Vishay Siliconix RD VDS 40 VGS D.U.T. ID , Drain Current (A) RG + - VDD 30 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 20 Fig. 10a - Switching Time Test Circuit VDS 10 90 % 0 25 50 75 100 125 150 10 % VGS TC , Case Temperature ( ° C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.01 0.20 0.10 0.05 0.02 0.01 0.001 0.
PAGE 6
IRFPS37N50A, SiHFPS37N50A Vishay Siliconix V DSav , Avalanche Voltage (V) 580 15 V Driver L VDS D.U.T. RG + A - VDD IAS 20 V tp 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 560 540 520 500 A 0 VDS 10 20 30 40 I av , Avalanche Current (A) tp Fig. 12d - Maximum Avalanche Energy vs. Drain Current IAS QG 10 V Fig. 12b - Unclamped Inductive Waveforms QGS EAS , Single Pulse Avalanche Energy (mJ) 3000 TOP 2500 BOTTOM ID 16A 23A 36A QGD VG Charge 2000 Fig.
PAGE 7
IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information Vishay Siliconix TO-274AA (HIGH VOLTAGE) B A E E4 A D2 E1 A1 R D1 D L1 L Detail “A” C b e A2 0.10 (0.25) M B A M 10° b4 b2 Lead Tip 5° Detail “A” Scale: 2:1 MILLIMETERS DIM. MIN. MAX. INCHES MIN. MAX. MILLIMETERS DIM. MIN. MAX. INCHES MIN. MAX. A 4.70 5.30 0.185 0.209 D1 15.50 16.10 0.610 0.634 A1 1.50 2.50 0.059 0.098 D2 0.70 1.30 0.028 0.051 A2 2.25 2.65 0.089 0.104 E 15.10 16.10 0.594 0.634 b 1.30 1.60 0.051 0.
PAGE 9
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