Datasheet

www.vishay.com Document Number: 91241
6 S11-0443-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFPC50A, SiHFPC50A
Vishay Siliconix
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanche Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
A
R
G
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
Driver
A
15 V
20 V
t
p
V
DS
I
AS
25 50 75 100 125 150
0
400
800
1200
1600
2000
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
4.9A
7.0A
11A
650
660
670
680
690
700
710
720
730
012345678910111213
DSav
av
I , Avalanche Current (A)
V , Avalanche Voltage (V)
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
D.U.T.
V
DS
I
D
I
G
3 mA
V
GS
0.3 µF
50 kΩ
0.2 µF
12 V
Current regulator
Same type as D.U.T.
Current sampling resistors
+
-