Datasheet

ManualsBrandsVISHAY ManualsFETsIRFPC50APBF, MOSFET

Document Number: 91241 www.vishay.com

S11-0443-Rev. B, 14-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRFPC50A, SiHFPC50A

Vishay Siliconix

FEATURES

• Low Gate Charge Q

Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Effective C

oss

Specified

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGY

• PFC Boost

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 15 mH, R

= 25 , I

= 11 A (see fig. 12).

c. I

 11 A, dI/dt  126 A/μs, V

 V

, T

 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 600

DS(on)

()V

= 10 V 0.58

(Max.) (nC) 70

(nC) 19

(nC) 28

Configuration Single

N-Channel MOSFET

TO-247AC

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free

IRFPC50APbF

SiHFPC50A-E3

SnPb

IRFPC50A

SiHFPC50A

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

600

Gate-Source Voltage V

± 30

Continuous Drain Current V

at 10 V

= 25 °C

= 100 °C 7.0

Pulsed Drain Current

Linear Derating Factor 1.4 W/°C

Single Pulse Avalanche Energy

920 mJ

Repetitive Avalanche Current

11 A

Repetitive Avalanche Energy

18 mJ

Maximum Power Dissipation T

= 25 °C P

180 W

Peak Diode Recovery dV/dt

dV/dt 4.9 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.
PAGE 2
IRFPC50A, SiHFPC50A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.65 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.65 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.
PAGE 3
IRFPC50A, SiHFPC50A Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 4.5V 1 20μs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 TJ = 150 ° C 10 TJ = 25 ° C 1 4.0 100 VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) 10 4.5V 20μs PULSE WIDTH TJ = 150 ° C 10 VDS , Drain-to-Source Voltage (V) Fig.
PAGE 4
IRFPC50A, SiHFPC50A Vishay Siliconix 100000 ISD , Reverse Drain Current (A) 10000 C, Capacitance (pF) 100 V GS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + C gd Ciss 1000 Coss 100 Crss 10 10 TJ = 150 ° C TJ = 25 ° C 1 0.1 0.2 1 1 10 100 1000 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 0.6 1.2 1.4 1.
PAGE 5
IRFPC50A, SiHFPC50A Vishay Siliconix RD VDS 12 VGS 10 ID , Drain Current (A) D.U.T. RG + - VDD 10 V 8 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 6 Fig. 10a - Switching Time Test Circuit 4 VDS 90 % 2 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10 % VGS t d(on) tr t d(off) t f Fig. 10b - Switching Time Waveforms Fig. 9 - Maximum Drain Current vs. Case Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.01 0.
PAGE 6
IRFPC50A, SiHFPC50A Vishay Siliconix V DSav , Avalanche Voltage (V) 730 15 V Driver L VDS D.U.T RG + A - VDD IAS 20 V tp A 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 720 710 700 690 680 670 660 V DS 650 0 tp 1 2 3 4 5 6 7 8 9 10 11 12 13 I av , Avalanche Current (A) Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current I AS QG Fig. 12b - Unclamped Inductive Waveforms 10 V EAS , Single Pulse Avalanche Energy (mJ) 2000 TOP 1600 BOTTOM ID 4.9A 7.
PAGE 7
IRFPC50A, SiHFPC50A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 4 4 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L A See view B 2 x b2 3xb 0.10 M C A M 4 E1 0.01 M D B M View A - A C 2x e A1 b4 Planting Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain D DE (b1, b3, b5) Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 A1 2.21 2.
PAGE 9
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