Datasheet

IRFP460B, SiHG460B
www.vishay.com
Vishay Siliconix
S12-0812-Rev. B, 16-Apr-12
3
Document Number: 91502
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
11 V
0
20
40
60
80
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
0 5 10 15 20 25 30
T
J
= 25 °C
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
BOTTOM 5 V
11 V
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
0 5 10 15 20 25 30
T
J
= 150 °C
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9 V
8 V
7 V
6 V
BOTTOM 5 V
V
GS
, Gate-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
0 5 10 15 20
25
T
J
= 25 °C
T
J
= 150 °C
20
40
60
80
0
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain-to-Source
- 60 - 40 - 20
0
20 40 60 80 100 120
140
160
On Resistance (Normalized)
0
0.5
1
1.5
2
2.5
3
V
GS
= 10 V
I
D
= 10 A
ġ
ġ
ġ
ġ
ġ
V
DS
, Drain-to-Source Voltage (V)
Capacitance (pF)
C
iss
C
oss
C
rss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
1
10
100
1000
0 100 200 300 400 500
10 000
Q
g
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
16
4
0
24
20
12
8
0306090
120
150 180
V
DS
= 400 V
V
DS
= 250 V
V
DS
= 100 V