Datasheet

ManualsBrandsVISHAY ManualsFETsIRFP460BPBF, MOSFET

IRFP460B, SiHG460B

www.vishay.com

Vishay Siliconix

S12-0812-Rev. B, 16-Apr-12

Document Number: 91502

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

D Series Power MOSFET

FEATURES

•Optimal Design

- Low Area Specific On-Resistance

- Low Input Capacitance (C

iss

)

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

- Avalanche Energy Rated (UIS)

• Optimal Efficiency and Operation

- Low Cost

- Simple Gate Drive Circuitry

- Low Figure-of-Merit (FOM): R

x Q

- Fast Switching

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

Note

* Lead (Pb)-containing terminations are not RoHS-compliant.

Exemptions may apply.

APPLICATIONS

• Consumer Electronics

- Displays (LCD or Plasma TV)

• Server and Telecom Power Supplies

- SMPS

• Industrial

- Welding

- Induction Heating

- Motor Drives

• Battery Chargers

•SMPS

- Power Factor Correction (PFC)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

= 50 V, starting T

= 25 °C, L = 10 mH, R

= 25 , I

= 7.5 A.

c. 1.6 mm from case.

d. I

 I

, starting T

= 25 °C.

PRODUCT SUMMARY

(V) at T

max. 550

DS(on)

max. at 25 °C ()V

= 10 V 0.25

max. (nC) 170

(nC) 14

(nC) 28

Configuration Single

N-Channel MOSFET

TO-247AC

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free IRFP460BPbF

Lead (Pb)-free and Halogen-free SiHG460B-GE3

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

500

V Gate-Source Voltage

± 20

Gate-Source Voltage AC (f > 1 Hz) 30

Continuous Drain Current (T

= 150 °C) V

at 10 V

= 25 °C

= 100 °C 13

Pulsed Drain Current

Linear Derating Factor 2.2 W/°C

Single Pulse Avalanche Energy

281 mJ

Maximum Power Dissipation P

278 W

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150 °C

Drain-Source Voltage Slope T

= 125 °C

dV/dt

V/ns

Reverse Diode dV/dt

0.36

Soldering Recommendations (Peak Temperature) for 10 s 300

°C

Summary of content (8 pages)

PAGE 1
IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 RDS(on) max. at 25 °C () VGS = 10 V Qg max.
PAGE 2
IRFP460B, SiHG460B www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 0.45 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRFP460B, SiHG460B www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 60 TJ = 25 °C RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 15 V 14 V 13 V 12 V 11 11 V V 10 V 9V 8V 7V 6V BOTTOM 5 V 3 TOP 40 20 2.5 2 1.5 1 VGS = 10 V 0.5 0 0 5 10 15 20 25 ID = 10 A 0 - 60 - 40 - 20 0 30 VDS, Drain-to-Source Voltage (V) 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs.
PAGE 4
IRFP460B, SiHG460B www.vishay.com Vishay Siliconix 20 ISD, Reverse Drain Current (A) 100 ID, Drain Current (A) TJ = 150 °C TJ = 25 °C 10 ġ ġ 1 16 12 8 4 VGS = 0 V ġ 0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 1.6 VSD, Source-Drain Voltage (V) 75 100 125 150 TJ, Case Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs.
PAGE 5
IRFP460B, SiHG460B www.vishay.com Vishay Siliconix RD VDS QG 10 V VGS D.U.T. RG QGS + - VDD QGD VG 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Charge Fig. 12 - Switching Time Test Circuit Fig. 16 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. VDS 90 % 50 kΩ 12 V 0.2 µF 0.3 µF + 10 % VGS D.U.T. td(on) td(off) tf tr - VDS VGS 3 mA Fig. 13 - Switching Time Waveforms IG ID Current sampling resistors Fig.
PAGE 6
IRFP460B, SiHG460B www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 7
Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 4 4 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L A See view B 2 x b2 3xb 0.10 M C A M 4 E1 0.01 M D B M View A - A C 2x e A1 b4 Planting Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain D DE (b1, b3, b5) Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 A1 2.21 2.
PAGE 8
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