Datasheet

Document Number: 91234 www.vishay.com
S09-1284-Rev. B, 13-Jul-09 3
IRFP460A, SiHFP460A
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
1
0.1
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20 µs Pulse Width
T
C
= 25 °C
4.5 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
10
2
10
1
0.1
10
10
2
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
2
10
1
10 10
2
V
DS
,
Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
4.5 V
20 µs Pulse Width
T
C
= 150 °C
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Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
1
20 µs Pulse Width
V
DS
= 50 V
I
D
, Drain-to-Source Current (A)
V
GS
,
Gate-to-Source Voltage (V)
5.0 6.0 7.0 8.0 9.04.0
25 °C
150 °C
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10
2
10
1
0.1
I
D
= 20 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
- 60 - 40 - 20 0 20 40
60
80 100
120
140 160
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
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