Datasheet

ManualsBrandsVISHAY ManualsFETsIRFP460APBF, MOSFET

Document Number: 91234 www.vishay.com

S09-1284-Rev. B, 13-Jul-09 1

Power MOSFET

IRFP460A, SiHFP460A

Vishay Siliconix

FEATURES

• Low Gate Charge Q

Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Effective C

oss

Specified

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Full Bridge

• PFC Boost

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 4.3 mH, R

= 25 Ω, I

= 20 A (see fig. 12).

c. I

≤ 20 A, dI/dt ≤ 125 A/µs, V

≤ V

, T

≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 500

DS(on)

(Ω)V

= 10 V 0.27

(Max.) (nC) 105

(nC) 26

(nC) 42

Configuration Single

N-Channel MOSFET

TO-247

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-247

Lead (Pb)-free

IRFP460APbF

SiHFP460A-E3

SnPb

IRFP460A

SiHFP460A

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

500

Gate-Source Voltage V

± 30

Continuous Drain Current V

at 10 V

= 25 °C

= 100 °C 13

Pulsed Drain Current

Linear Derating Factor 2.2 W/°C

Single Pulse Avalanche Energy

960 mJ

Repetitive Avalanche Current

20 A

Repetitive Avalanche Energy

28 mJ

Maximum Power Dissipation T

= 25 °C P

280 W

Peak Diode Recovery dV/dt

dV/dt 3.8 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC 500 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.
PAGE 2
IRFP460A, SiHFP460A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.45 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.
PAGE 3
IRFP460A, SiHFP460A Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 102 VGS Top 10 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 1 4.5 V 20 µs Pulse Width TC = 25 °C 0.1 0.1 VDS, Drain-to-Source Voltage (V) 91234_01 150 °C 10 25 °C 1 4.0 10 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 4.5 V 20 µs Pulse Width TC = 150 °C 1 10 1 91234_02 Fig. 2 - Typical Output Characteristics Document Number: 91234 S09-1284-Rev. B, 13-Jul-09 3.0 2.5 7.0 8.0 9.
PAGE 4
IRFP460A, SiHFP460A Vishay Siliconix VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 104 Ciss 103 102 Coss 10 Crss 102 ISD, Reverse Drain Current (A) 105 VGS = 0 V 0.1 1 102 10 103 VDS, Drain-to-Source Voltage (V) 91234_05 0.2 103 ID, Drain Current (A) 12 VDS = 100 V 8 4 For test circuit see figure 13 0 0 91234_06 20 40 60 80 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 1.0 1.2 1.4 1.
PAGE 5
IRFP460A, SiHFP460A Vishay Siliconix RD VDS VGS ID, Drain Current (A) 20 D.U.T. RG + - VDD 10 V 15 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 10 Fig. 10a - Switching Time Test Circuit VDS 5 90 % 0 25 50 75 100 125 150 10 % VGS TC, Case Temperature (°C) 91234_09 td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 1 D = 0.5 0.1 0.2 0.1 0.05 10-2 PDM 0.02 0.
PAGE 6
IRFP460A, SiHFP460A 2400 ID Top 8.9 A 13 A Bottom 20 A 2000 1600 1200 800 400 0 620 VDSav, Avalanche Voltage (V) EAS, Single Pulse Avalanche Energy (mJ) Vishay Siliconix 600 580 560 540 25 50 75 100 125 Starting TJ, Junction Temperature (°C) 91234_12c 0 150 Fig. 12c - Maximum Avalanche Energy vs. Drain Current 8 4 12 16 20 IAV, Avalanche Current (A) 91234_12d Fig. 12d - Typical Drain-to-Source Voltage vs. Avalanche Current Current regulator Same type as D.U.T.
PAGE 7
IRFP460A, SiHFP460A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 4 4 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L A See view B 2 x b2 3xb 0.10 M C A M 4 E1 0.01 M D B M View A - A C 2x e A1 b4 Planting Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain D DE (b1, b3, b5) Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 A1 2.21 2.
PAGE 9
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