Datasheet

ManualsBrandsVISHAY ManualsFETsIRFP360LCPBF, MOSFET

Document Number: 91227 www.vishay.com

S11-0444-Rev. B, 14-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRFP360LC, SiHFP360LC

Vishay Siliconix

FEATURES

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Enhanced 30 V V

Rating

• Reduced C

iss

, C

oss

, C

rss

• Isolated Central Mounting Hole

• Dynamic dV/dt Rated

• Repetitive Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

his new series of low charge Power MOSFETs achieve

significantly lower gate charge over convertional MOSFETs.

Utilizing advanced MOSFETs technology the device

improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings.

These device improvements combined with the proven

ruggedness and reliability of MOSFETs offer the designer a

new standard in power transistors for switching applications.

The TO-247AC package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220AB devices. The TO-247AC is similar but superior to

the earlier TO-218 package because of its isolated mounting

hole.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, starting T

= 25 °C, L = 4.0 mH, R

= 25 Ω, I

= 23 A (see fig. 12).

c. I

≤ 23 A, dI/dt ≤ 170 A/μs, V

≤ V

, T

≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 400

DS(on)

(Ω)V

= 10 V 0.20

(Max.) (nC) 110

(nC) 28

(nC) 45

Configuration Single

N-Channel MOSFET

TO-247AC

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free

IRFP360LCPbF

SiHFP360LC-E3

SnPb

IRFP360LC

SiHFP360LC

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

400

Gate-Source Voltage V

± 30

Continuous Drain Current V

at 10 V

= 25 °C

= 100 °C 14

Pulsed Drain Current

Linear Derating Factor 2.2 W/°C

Single Pulse Avalanche Energy

1200 mJ

Repetitive Avalanche Current

23 A

Repetitive Avalanche Energy

28 mJ

Maximum Power Dissipation T

= 25 °C P

280 W

Peak Diode Recovery dV/dt

dV/dt 4.0 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.20 110 Qgs (nC) 28 Qgd (nC) 45 Configuration Single D COMPLIANT This new series of low charge Power MOSFETs achieve significantly lower gate charge over convertional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.
PAGE 2
IRFP360LC, SiHFP360LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.45 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRFP360LC, SiHFP360LC Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91227 S11-0444-Rev. B, 14-Mar-11 www.vishay.com 3 This datasheet is subject to change without notice.
PAGE 4
IRFP360LC, SiHFP360LC Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 Document Number: 91227 S11-0444-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.
PAGE 5
IRFP360LC, SiHFP360LC Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature tr td(off) tf Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91227 S11-0444-Rev. B, 14-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice.
PAGE 6
IRFP360LC, SiHFP360LC Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - I AS V DD VDS 10 V 0.01 Ω tp Fig. 12a - Unclamped Inductive Test Circuit IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig.
PAGE 7
IRFP360LC, SiHFP360LC Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 4 4 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L A See view B 2 x b2 3xb 0.10 M C A M 4 E1 0.01 M D B M View A - A C 2x e A1 b4 Planting Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain D DE (b1, b3, b5) Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 A1 2.21 2.
PAGE 9
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