Datasheet

ManualsBrandsVISHAY ManualsFETsIRFP360LC, MOSFET N channel 23A 400V

IRFP360LC

HEXFET

Power MOSFET

PD - 9.1230

Revision 0

DSS

= 400V

DS(on)

= 0.20Ω

= 23A

Ultra Low Gate Charge

Reduced Gate Drive Requirement

Enhanced 30V V

Rating

Reduced C

iss

, C

oss

, C

rss

Isolated Central Mounting Hole

Dynamic dv/dt Rated

Repetitive Avalanche Rated

Absolute Maximum Ratings

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 23

@ T

= 100°C Continuous Drain Current, V

@ 10V 14 A

Pulsed Drain Current 92

= 25°C Power Dissipation 280 W

Linear Derating Factor 2.2 W/°C

Gate-to-Source Voltage ±30 V

Single Pulse Avalanche Energy 1200 mJ

Avalanche Current 23 A

Repetitive Avalanche Energy 28 mJ

dv/dt Peak Diode Recovery dv/dt 4.0 V/ns

Operating Junction and -55 to + 150

STG

Storage Temperature Range °C

Soldering Temperature, for 10 seconds 300 (1.6mm from case)

Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Parameter Min. Typ. Max. Units

θJC

Junction-to-Case –––– –––– 0.45

θCS

Case-to-Sink, Flat, Greased Surface –––– 0.24 –––– °C/W

θJA

Junction-to-Ambient –––– –––– 40

Thermal Resistance

Description

This new series of Low Charge HEXFET Power MOSFETs achieve significantly

lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet

technology the device improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings. These device

improvements combined with the proven ruggedness and reliability of HEXFETs

offer the designer a new standard in power transistors for switching applications.

The TO-247 package is preferred for commercial-industrial applications where

higher power levels preclude the use of TO-220 devices. The TO-247 is similar

but superior to the earlier TO-218 package because of its isolated mounting hole.

Summary of content (8 pages)

PAGE 1
PD - 9.1230 IRFP360LC HEXFET ® Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 400V RDS(on) = 0.20 Ω ID = 23A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.
PAGE 2
IRFP360LC Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(ON) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
PAGE 3
IRFP360LC 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 100 10 1 4.5V 20µs PULSE WIDTH TC = 25°C 0.1 0.1 1 V DS 10 10 4.5V 1 20µs PULSE WIDTH TC = 150°C 0.1 10 0 DS 10 R DS(on) , Drain-to-Source On Resistance (Normalized) T J = 15 0 °C TJ = 25°C 1 V DS = 50V 2 0 µ s P U LS E W ID TH 3.0 I D = 23A 2.5 2.0 1.5 1.0 0.5 VGS = 10V 0.
PAGE 4
IRFP360LC 20 60 0 0 40 0 0 Ciss 30 0 0 20 0 0 VDS = 320V VDS = 200V VDS = 80V 16 12 8 GS Coss I D = 23A 4 V C, Capacitance (pF) 50 0 0 , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 10 0 0 Crss FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 10 0 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 60 90 12 0 Fig 6. Typical Gate Charge Vs.
PAGE 5
IRFP360LC VDS VGS 25 RD D.U.T. RG ID, Drain Current (Amps) VDD 20 10 V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 15 Fig 10a. Switching Time Test Circuit 10 5 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms T herm al R esponse (Z thJC ) 1 D = 0 .5 0 0.1 0 .2 0 0 .1 0 0 .0 5 PD M 0 .0 2 0.01 0 .0 1 t 1 S ING L E P UL S E (T H E R M A L R E S P O N S E ) t2 N o te s : 1 .
PAGE 6
10 V Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) IRFP360LC 30 00 ID 10A 15A BOTTOM 23A TOP 25 00 20 00 15 00 10 00 5 00 0 VDD = 50V 25 50 75 100 125 Starting TJ , Juntion Temperature (°C) Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V Fig 13a. Basic Gate Charge Waveform Fig 13b.
PAGE 7
IRFP360LC Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer D.U.T RG • • • • dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD * * VGS = 5V for Logic Level Devices Fig 14.
PAGE 8
IRF360LC Package Outline TO-247AC Part Marking Information TO-247AC EXAMPLE : THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 3A1Q A INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 3A1Q 9302 ASSEMBLY LOT CODE DATE CODE (YYWW) YY = YEAR WW WEEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave.