Datasheet

ManualsBrandsVISHAY ManualsFETsIRFP350LCPBF, MOSFET

Document Number: 91224 www.vishay.com

S11-0448-Rev. B, 14-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRFP350LC, SiHFP350LC

Vishay Siliconix

FEATURES

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Enhanced 30V V

Rating

• Reduced C

iss

, C

oss

, C

rss

• Isolated Central Mounting Hole

• Dynamic dV/dt Rated

• Repetitive Avalanche Rated

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

This new series of low charge Power MOSFETs achieve

significantly lower gate charge over conventional MOSFETs.

Utilizing advanced MOSFETs technology the device

improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings.

These device improvements combined with the proven

ruggedness and reliability of MOSFETs offer the designer a

new standard in power transistors for switching

applications.

The TO-247AC package is preferred for

commercial-industrial applications where higher power

levels preclude the use of TO-220AB devices. The

TO-247AC is similar but superior to the earlier TO-218

package because of its isolated mounting hole.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, starting T

= 25 °C, L = 2.7 mH, R

= 25 Ω, I

= 16 A (see fig. 12).

c. I

≤ 16 A, dI/dt ≤ 200 A/μs, V

≤ V

, T

≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 400

DS(on)

(Ω)V

= 10 V 0.30

(Max.) (nC) 76

(nC) 20

(nC) 37

Configuration Single

N-Channel MOSFET

TO-247AC

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free

IRFP350LCPbF

SiHFP350LC-E3

SnPb

IRFP350LC

SiHFP350LC

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

400

Gate-Source Voltage V

± 30

Continuous Drain Current V

at 10 V

= 25 °C

= 100 °C 9.9

Pulsed Drain Current

Linear Derating Factor 1.5 W/°C

Single Pulse Avalanche Energy

390 mJ

Repetitive Avalanche Current

16 A

Repetitive Avalanche Energy

19 mJ

Maximum Power Dissipation T

= 25 °C P

190 W

Peak Diode Recovery dV/dt

dV/dt 4.0 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings.
PAGE 2
IRFP350LC, SiHFP350LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC - 0.65 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 400 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.49 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.
PAGE 3
IRFP350LC, SiHFP350LC Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91224 S11-0448-Rev. B, 14-Mar-11 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice.
PAGE 4
IRFP350LC, SiHFP350LC Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91224 S11-0448-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.
PAGE 5
IRFP350LC, SiHFP350LC Vishay Siliconix RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature tr td(off) tf Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91224 S11-0448-Rev. B, 14-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice.
PAGE 6
IRFP350LC, SiHFP350LC Vishay Siliconix VDS L Vary tp to obtain required IAS VDS tp VDD D.U.T RG + - IAS V DD A VDS 10 V 0.01 Ω tp Fig. 12a - Unclamped Inductive Test Circuit IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig.
PAGE 7
IRFP350LC, SiHFP350LC Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 4 4 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L A See view B 2 x b2 3xb 0.10 M C A M 4 E1 0.01 M D B M View A - A C 2x e A1 b4 Planting Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain D DE (b1, b3, b5) Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 A1 2.21 2.
PAGE 9
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