Datasheet

www.vishay.com Document Number: 91209
6 S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
Fig. 13 - Threshold Voltage vs. Temperature
Fig. 14 - Maximum Avalanche Energy s. Drain Current
Fig. 15a - Unclamped Inductive Test Circuit
Fig. 15b - Unclamped Inductive Waveforms
Fig. 16a - Gate Charge Test Circuit
Fig. 16b - Basic Gate Charge Waveform
- 75 - 50 - 25 0 25 50 75 100 125
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
150
I
D
= 250 µA
V
GS(th)
Gate Threshold Voltage (V)
T
J
, Temperature (°C)
0
150
300
450
600
750
25
50
75 100
125
150
E
AS
, Single Pulse Avalanche Energy (mJ)
Starting T , Junction Temperature (°C)
I
D
TOP 10A
15A
BOTTOM 23A
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
Driver
A
15 V
20 V
I
AS
V
DS
t
p
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Q
GS
Q
GD
Q
G
V
G
Charge
10 V