Datasheet
Document Number: 91209 www.vishay.com
S11-0445-Rev. B, 21-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
Fig. 9 - Typical Source-Drain Diode Forward Voltage
Fig. 10 - Maximum Drain Current vs. Case Temperature
Fig. 11a - Switching Time Test Circuit
Fig. 11b - Switching Time Waveforms
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.0
0.10
1.00
10.00
100.00
0.5
1.0
1.5
2.0
I
SD
, Reverse Drain Current (A)
V
SD
, Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
V
GS
= 0 V
50 75 100 150
0
5
10
15
20
25
25
125
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Thermal Response (Z
thJC
)
t
1
, Rectangular Pulse Duration (sec)
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. PeakT
J
= P
DM
x Z
thJC
+ T
C
P
DM
t
1
t
2