Datasheet

www.vishay.com Document Number: 91209
4 S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Maximum Safe Operating Area
Fig. 8 - Typical Gate Charge vs. Gate-to-Source Voltage
1 10 100 1000
10
100
1000
10000
100000
C, Capacitance (pF)
V
DS
, Drain-to-Source Voltage (V)
V
GS
= 0 V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
Ciss
Coss
Crss
0
V
DS
, Drain-to-Source Voltage (V)
0
5
10
15
20
25
Energy (µJ)
100
200 300
400
500 600
OPERATION IN THIS AREA LIMITED
1000
100
10
1
10
100
1000 10000
T
C
= 25 °C
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
BY R
DS(ON)
10us
100us
1ms
10ms
T
J
= 150 °C
Single Pulse
24
0
2
5
7
10
12
048
72
96
120
V
GS
, Gate-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
I
D
= 23
V
DS
= 400 V
V
DS
= 250 V
V
DS
= 100 V