Datasheet

Document Number: 91209 www.vishay.com
S11-0445-Rev. B, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP23N50L, SiHFP23N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
0.1 1 10 100
0.001
0.01
0.1
1
10
100
I
D
,
Drain-to-Source Current (A)
4.5 V
20µs PULSE WIDTH
Tj = 25 °C
V
DS
, Drain-to-Source Voltage (V)
TOP 15V
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10 100
0.1
10
100
20µs PULSE WIDTH
Tj = 150 °C
V
DS
, Drain-to-Source Voltage (V)
1
1
I
D
, Drain-to-Source Current (A)
4,5 V
TOP 15V
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1.0 6.0 11.0 16.0
V
GS
, Gate-to-Source Voltage (V)
1.00
10.00
100.00
1000.00
I
D
, Drain-to Source Current (A)
T
J
= 25 °C
T
J
= 150 °C
20 µs PULSE WIDTH
T
J
= 150°C
-60 -40 -20 0 20 40 60 80 100 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
D
= 23 A
V
GS
= 10 V
120
T
J
,
Junction Temperature (°C)
R
DS(ON)
, Drain-to-Source On Resistance
(Normalized)