Datasheet

ManualsBrandsVISHAY ManualsFETsIRFP23N50LPBF, MOSFET

Document Number: 91209 www.vishay.com

S11-0445-Rev. B, 21-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRFP23N50L, SiHFP23N50L

Vishay Siliconix

FEATURES

• Superfast Body Diode Eliminates the Need for

External Diodes in ZVS Applications

• Lower Gate Charge Results in Simpler Drive

Requirements

• Enhanced dV/dt Capabilities Offer Improved Ruggedness

• Higher Gate Voltage Threshold Offers Improved Noise

Immunity

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control Applications

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 1.5 mH, R

= 25 , I

= 23 A (see fig. 12).

c. I

 23 A, dI/dt  650 A/μs, V

 V

, T

 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 500

DS(on)

()V

= 10 V 0.190

(Max.) (nC) 150

(nC) 44

(nC) 72

Configuration Single

N-Channel MOSFET

TO-247AC

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free

IRFP23N50LPbF

SiHFP23N50L-E3

SnPb

IRFP23N50L

SiHFP23N50L

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

500

Gate-Source Voltage V

± 30

Continuous Drain Current V

at 10 V

= 25 °C

= 100 °C 15

Pulsed Drain Current

Linear Derating Factor 2.9 W/°C

Single Pulse Avalanche Energy

410 mJ

Repetitive Avalanche Current

23 A

Repetitive Avalanche Energy

37 mJ

Maximum Power Dissipation T

= 25 °C P

370 W

Peak Diode Recovery dV/dt

dV/dt 21 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.190 Qg (Max.
PAGE 2
IRFP23N50L, SiHFP23N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL TYP. MAX. UNIT RthJA RthCS RthJC 0.24 - 40 0.34 °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRFP23N50L, SiHFP23N50L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 1000.00 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 ID, Drain-to Source Current (A) ID, Drain-to-Source Current (A) TOP 1 0.1 4.5 V 0.01 TJ = 25 °C 100.00 TJ = 150 °C 10.00 20 µs PULSE WIDTH 20µs PULSE WIDTH Tj = 25 °C 0.001 TJ = 150°C 1.00 0.1 1 10 100 1.0 6.0 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 100 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.
PAGE 4
IRFP23N50L, SiHFP23N50L Vishay Siliconix 1000 VGS = 0 V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 OPERATION IN THIS AREA LIMITED BY RDS(ON) ID, Drain Current (A) C, Capacitance (pF) 100000 Ciss 1000 Coss 100 10us 100us 10 100 1ms TC = 25 °C TJ = 150 °C Single Pulse Crss 10 1 1 10 100 1000 1000 100 10 10000 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig.
PAGE 5
IRFP23N50L, SiHFP23N50L Vishay Siliconix 100.00 RD ISD, Reverse Drain Current (A) VDS VGS TJ = 150 °C D.U.T. RG 10.00 + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % TJ = 25 °C 1.00 Fig. 11a - Switching Time Test Circuit VGS = 0 V VDS 0.10 1.5 1.0 0.5 0.0 90 % 2.0 VSD, Source-to-Drain Voltage (V) Fig. 9 - Typical Source-Drain Diode Forward Voltage 10 % VGS 25 td(on) td(off) tf tr ID, Drain Current (A) 20 Fig.
PAGE 6
IRFP23N50L, SiHFP23N50L Vishay Siliconix VDS VGS(th) Gate Threshold Voltage (V) 5.0 tp 4.5 4.0 ID = 250 µA 3.5 3.0 IAS 2.5 Fig. 15b - Unclamped Inductive Waveforms 2.0 1.5 Current regulator Same type as D.U.T. 1.0 - 75 - 50 - 25 0 25 50 75 100 125 150 50 kΩ TJ, Temperature (°C) 12 V 0.2 µF Fig. 13 - Threshold Voltage vs. Temperature 0.3 µF + D.U.T.
PAGE 7
IRFP23N50L, SiHFP23N50L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 4 4 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L A See view B 2 x b2 3xb 0.10 M C A M 4 E1 0.01 M D B M View A - A C 2x e A1 b4 Planting Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain D DE (b1, b3, b5) Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 A1 2.21 2.
PAGE 9
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