Datasheet

www.vishay.com Document Number: 91206
6 S11-0446-Rev. C, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
Fig. 13 - Threshold Voltage vs. Temperature
Fig. 14a - Maximum Avalanche Energy vs. Drain Current
Fig. 14b - Unclamped Inductive Test Circuit
Fig. 14c - Unclamped Inductive Waveforms
Fig. 15a - Gate Charge Test Circuit
Fig. 15b - Basic Gate Charge Waveform
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 9.4A
13A
BOTTOM 21A
A
R
G
I
AS
0.01 Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
Driver
A
15 V
20 V
I
AS
V
DS
t
p
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
Q
GS
Q
GD
Q
G
V
G
Charge
V
GS