Datasheet
IRFL9014, SiHFL9014
www.vishay.com
Vishay Siliconix
S14-1686-Rev. F, 18-Aug-14
3
Document Number: 91195
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
20 µs Pulse Width
T
C
= 25 °C
4.5 V
Bottom
To p
V
GS
-
15 V
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
-4.5 V
91195_01
- V
DS
, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
10
1
10
0
10
-1
10
0
10
1
10
-1
91195_02
4.5 V
Bottom
To p
V
GS
-15 V
-10 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
-4.5 V
10
1
10
0
10
0
10
1
10
-1
- V
DS
,
Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
20 µs Pulse Width
T
C
= 150 °C
91195_03
25 °C
150 °C
20 µs Pulse Width
V
DS
= - 25 V
10
1
10
0
- I
D
, Drain Current (A)
- V
GS
,
Gate-to-Source Voltage (V)
5678910
4
10
-1
91195_04
I
D
= - 6.7 A
V
GS
= 10 V
0.0
0.5
1.0
1.5
2.0
2.5
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91195_05
600
500
400
300
0
100
200
10
0
10
1
Capacitance (pF)
- V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91195_06
I
D
= -6.7 A
V
DS
= -48 V
For test circuit
see figure 13
V
DS
= -30 V
Q
G
, Total Gate Charge (nC)
- V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
41612
8