Datasheet

Document Number: 91127 www.vishay.com
S09-1829-Rev. B, 21-Sep-09 3
IRFD110, SiHFD110
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 175 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
91127_01
20 µs Pulse Width
T
C
= 25 °C
4.5 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
1
10
0
10
0
10
1
10
-1
91127_02
10
1
10
0
10
0
10
1
10
-1
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 175 °C
4.5 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
91127_03
10
1
10
0
I
D
, Drain Current (A)
V
GS
,
Gate-to-Source Voltage (V)
5678 910
4
10
-1
25 °C
175 °C
20 µs Pulse Width
V
DS
= 50 V
91127_04
I
D
= 5.6 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
- 60 - 40 - 20 0 20 40
60
80 100 120 140 160
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
180