Datasheet

ManualsBrandsVISHAY ManualsFETsIRFBE30SPBF, MOSFET

Document Number: 91119

www.vishay.com

S11-1053-Rev. C, 30-May-11 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 50 V, starting T

= 25 °C, L = 29 mH, R

= 25 , I

= 4.1 A (see fig. 12).

c. I

 4.1 A, dI/dt  100 A/μs, V

 600 V, T

 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 800

DS(on)

()V

= 10 V 3.0

(Max.) (nC) 78

(nC) 9.6

(nC) 45

Configuration Single

N-Channel MOSFET

PAK

(TO-263)

PAK

(TO-262)

ORDERING INFORMATION

Package D

PAK (TO-263) D

PAK (TO-263) I

PAK (TO-262)

Lead (Pb)-free and Halogen-free SiHFBE30S-GE3 SiHFBE30STRL-GE3

SiHFBE30L-GE3

Lead (Pb)-free

IRFBE30SPbF IRFBE30STRLPbF

IRFBE30LPbF

SiHFBE30S-E3 SiHFBE30STL-E3

SiHFBE30L-E3

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

800

Gate-Source Voltage V

± 20

Continuous Drain Current V

at 10 V

= 25 °C

4.1

= 100 °C 2.6

Pulsed Drain Current

Linear Derating Factor 1.0 W/°C

Single Pulse Avalanche Energy

260 mJ

Avalanche Current

4.1 A

Repetitive Avalanche Energy

13 mJ

Maximum Power Dissipation T

= 25 °C P

125 W

Peak Diode Recovery dV/dt

dV/dt 2.0 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (10 pages)

PAGE 1
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC 800 RDS(on) () VGS = 10 V 3.0 Qg (Max.) (nC) 78 Qgs (nC) 9.
PAGE 2
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - - 62 Case-to-Sink, Flat, Greased Surface RthCS - 0.50 - Maximum Junction-to-Case (Drain) RthJC - - 1.0 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91119 S11-1053-Rev. C, 30-May-11 www.vishay.com 3 This document is subject to change without notice.
PAGE 4
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91119 S11-1053-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.
PAGE 5
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix RD VDS VGS D.U.T. Rg + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD Rg D.U.T. + - I AS V DD VDS 10 V tp 0.01 Ω Fig.
PAGE 6
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91119 S11-1053-Rev. C, 30-May-11 This document is subject to change without notice.
PAGE 7
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.
PAGE 8
Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN.
PAGE 9
AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.
PAGE 10
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