Datasheet

Document Number: 91098 www.vishay.com
S-81263-Rev. A, 21-Jul-08 3
IRFB17N50L, SiHFB17N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
0.1
1
10
100
0.01
0.1
1
10
100
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
To p
Bottom
5.0 V
20 μs PULSE WIDTH
T
J
= 25 °C
I
D
, Drain-to-Source Current (A)
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
VGS
15 V
12 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom
To p
5.0 V
20 μs PULSE WIDTH
T
J
= 125 °C
V
DS
= 50 V
20 μs PULSE WIDTH
T
J
= 25 °C
T
J
= 150 °C
5.0
4.0
7.0
6.0
8.0
9.0
10.0
0.1
1
10
100
V
GS
, Gate-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
I
D
= 16 A
V
GS
= 10 V
T
J
, Junction Temperature
R
DS(on)
, Drain-to-Source On Resistance (Normalized)
- 60
- 20
- 40
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
3.0