Datasheet

ManualsBrandsVishay ManualsDiscrete SemiconductorsMOSFET N, 500 V 16 A 220 W TO-220

Document Number: 91098 www.vishay.com

S-81263-Rev. A, 21-Jul-08 1

Power MOSFET

IRFB17N50L, SiHFB17N50L

Vishay Siliconix

FEATURES

• Low Gate Charge Q

results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and

Avalanche Voltage and Current

•Low T

and Soft Diode Recovery

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

• ZVS and High Frequency Circuit

• PWM Inverters

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 3.0 mH, R

= 25 Ω, I

= 16 A (see fig. 12).

c. I

≤ 16 A, dI/dt ≤ 347 A/µs, V

≤ V

, T

≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) 500

DS(on)

(Ω)V

= 10 V 0.28

(Max.) (nC) 130

(nC) 33

(nC) 59

Configuration Single

N-Channel MOSFET

TO-220

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-220

Lead (Pb)-free

IRFB17N50LPbF

SiHFB17N50L-E3

SnPb

IRFB17N50L

SiHFB17N50L

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

500

Gate-Source Voltage V

± 30

Continuous Drain Current V

at 10 V

= 25 °C

= 100 °C 11

Pulsed Drain Current

Linear Derating Factor 1.8 W/°C

Single Pulse Avalanche Energy

390 mJ

Repetitive Avalanche Current

16 A

Repetitive Avalanche Energy

22 mJ

Maximum Power Dissipation T

= 25 °C P

220 W

Peak Diode Recovery dV/dt

dV/dt 13 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (8 pages)

PAGE 1
IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.
PAGE 2
IRFB17N50L, SiHFB17N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 0.56 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 µA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.
PAGE 3
IRFB17N50L, SiHFB17N50L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 10 Bottom TJ = 150 °C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) Top VGS 15 V 12 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 1 5.0 V 0.1 10 TJ = 25 °C 1 20 μs PULSE WIDTH TJ = 25 °C 0.01 VDS = 50 V 20 μs PULSE WIDTH 0.1 0.1 1 4.0 100 10 VDS, Drain-to-Source Voltage (V) RDS(on), Drain-to-Source On Resistance (Normalized) VGS 15 V 12 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom 5.
PAGE 4
IRFB17N50L, SiHFB17N50L Vishay Siliconix 1 000 000 100 C, Capacitance (pF) 10 000 f = 1 MHz Shorted TJ = 150 °C ISD, Reverse Drain Current (A) VGS = 0 V, Ciss = Cgs + Cgd, Cds Crss = Cgd Coss = Cds + Cgd Ciss 1000 Coss 100 10 TJ = 25 °C 1 Crss 10 1 10 100 VDS, Drain-to-Source Voltage (V) 0.6 1.3 0.9 1.6 VSD, Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig.
PAGE 5
IRFB17N50L, SiHFB17N50L Vishay Siliconix RD VDS 20 VGS D.U.T. RG + - VDD ID, Drain Current (A) 16 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 12 Fig. 10a - Switching Time Test Circuit 8 VDS 4 0 90 % 50 25 75 150 125 100 10 % VGS TC, Case Temperature (°C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms 1 Thermal Response (ZthJC) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM 0.
PAGE 6
IRFB17N50L, SiHFB17N50L Vishay Siliconix 800 ID 7A 10 A 16 A EAS, Single Pulse Avalanche Energy (mJ) TOP BOTTOM 640 480 320 160 0 25 50 75 100 150 125 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig.
PAGE 7
IRFB17N50L, SiHFB17N50L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
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