Datasheet

Document Number: 91095 www.vishay.com
S11-0514-Rev. B, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRFB13N50A, SiHFB13N50A
Vishay Siliconix
FEATURES
• Lower Gate Charge Q
g
Results in Simpler Drive
Reqirements
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supplies
• High Speed Power Switching
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 5.7 mH, R
g
= 25 , I
AS
=14 A, dV/dt = 7.6 V/ns (see fig. 12a).
c. I
SD
 14 A, dI/dt  250 A/μs, V
DD
 V
DS
, T
J
 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 500
R
DS(on)
()V
GS
= 10 V 0.450
Q
g
(Max.) (nC) 81
Q
gs
(nC) 20
Q
gd
(nC) 36
Configuration Single
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
Available
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
IRFB13N50APbF
SiHFB13N50A-E3
SnPb
IRFB13N50A
SiHFB13N50A
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
V
DS
500
V
Gate-Source Voltage
V
GS
± 30
Continuous Drain Current
V
GS
at 10 V
T
C
= 25 °C
I
D
14
A
T
C
= 100 °C
9.1
Pulsed Drain Current
a
I
DM
56
Linear Derating Factor 2.0 W/°C
Single Pulse Avalanche Energy
b
E
AS
560 mJ
Avalanche Current
a
I
AR
14 A
Repetitive Avalanche Energy
a
E
AR
25 mJ
Maximum Power Dissipation
T
C
= 25 °C P
D
250 W
Peak Diode Recovery dV/dt
c
dV/dt 9.2 V/ns
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s
300
d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply