Datasheet

Document Number: 91091
www.vishay.com
S11-1063-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRF9Z24S, SiHF9Z24S)
• Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
• 175 °C Operating Temperature
•Fast Switching
• P-Channel
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IR9Z24L, SiH9Z24L) is available
for low-profile applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 2.3 mH, R
g
= 25 , I
AS
= - 11 A (see fig. 12).
c. I
SD
 - 11 A, dI/dt  140 A/μs, V
DD
 V
DS
, T
J
 175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z24, SiHF9Z24 data and test conditions.
PRODUCT SUMMARY
V
DS
(V) - 60
R
DS(on)
()V
GS
= - 10 V 0.28
Q
g
(Max.) (nC) 19
Q
gs
(nC) 5.4
Q
gd
(nC) 11
Configuration Single
S
G
D
P-Channel MOSFET
D
2
PAK (TO-263)
G
D
S
I
2
PAK (TO-262)
G
D
S
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263) D
2
PAK (TO-263) I
2
PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHF9Z24S-GE3 SiHF9Z24STRL-GE3
a
SiHF9Z24STRR-GE3
a
-
Lead (Pb)-free
IRF9Z24SPbF IRF9Z24STRLPbF
a
IRF9Z24STRRPbF
a
IRF9Z24LPbF
SiHF9Z24S-E3 SiHF9Z24STL-E3
a
SiHF9Z24STR-E3
a
SiHF9Z24L-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
V
DS
- 60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current
e
V
GS
at - 10 V
T
C
= 25 °C
I
D
- 11
A
T
C
= 100 °C - 7.7
Pulsed Drain Current
a, e
I
DM
- 44
Linear Derating Factor 0.40 W/°C
Single Pulse Avalanche Energy
b, e
E
AS
240 mJ
Repetitive Avalanche Current
a
I
AR
- 11 A
Repetitive Avalanche Energy
a
E
AR
6.0 mJ
Maximum Power Dissipation
T
A
= 25 °C
P
D
3.7 W
T
C
= 25 °C 60 W
Peak Diode Recovery dV/dt
c, e
dV/dt - 4.5 V/ns
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
* Pb containing terminations are not RoHS compliant, exemptions may apply