Datasheet

Document Number: 90121 www.vishay.com
S11-0511-Rev. B, 21-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z20, SiHF9Z20
Vishay Siliconix
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 11 - Typical On-Resistance vs. Drain Current
Fig. 12 - Maximum Drain Current vs. Case Temperature
1000
800
600
400
0
200
110
C, Capacitance (pF)
Negative V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
90121_10
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gs
C
gd
/ (C
gs
+ C
gd
)
≈ C
ds
+ C
gd
10
2
5252
Q
G
, Total Gate Charge (nC)
Negative V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
8
40
3224
16
V
SD
= - 40 V
For test circuit
see figure 17
90121_11
I
D
= - 9.7 A
90121_12
Negative I
D
, Drain Current (A)
R
DS(on)
, Drain-to-Source On Resistance
0.0
0.4
0.8
1.2
1.6
2.0
403216824
V
GS
= - 10 V
V
GS
= - 20 V
80 µs Pulse Test
0
150
Negative I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
2
4
6
8
10
25
90121_13
1251007550
0
IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22