Datasheet

www.vishay.com Document Number: 90121
4 S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z20, SiHF9Z20
Vishay Siliconix
Fig. 5 - Typical Transconductance vs. Drain Current
Fig. 6 - Typical Source-Drain Diode Forward Voltage
Fig. 7 - Breakdown Voltage vs. Temperature
Fig. 8 - Normalized On-Resistance vs. Temperature
5.0
4.0
3.0
2.0
0.0
1.0
0
4
20
1612
8
90121_06
T
J
= 25 °C
T
J
= 150 °C
80 µs Pulse Test
V
DS
< - 50 V
g
fs
,Transconductance (S)
Negative I
D
,
Drain Current (A)
10
2
1
Negative V
SD
, Source-to-Drain Voltage (V)
Negative I
DR
, Reverse Drain Current (A)
08642
90121_07
T
J
= 25 °C
T
J
= 150 °C
10
0.1
10
5
2
5
2
5
2
90121_08
T
J
, Junction Temperature (°C)
BV
DSS
, Drain-to-Source Breakdown
1.25
Voltage (Normalized)
1.15
0.75
0.85
0.95
1.05
- 60 - 40 - 20 0 20 40 60 80 100
120
140 160
I
D
= 1 mA
90121_09
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
3.0
(Normalized)
2.4
0.0
0.6
1.2
1.8
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
I
D
= - 9.7 A
V
GS
= - 10 V