Datasheet

Document Number: 90121 www.vishay.com
S11-0511-Rev. B, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z20, SiHF9Z20
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Typical Saturation Characteristics
Fig. 4 - Maximum Safe Operating Area
90121_01
- 4 V
Negative V
DS
, Drain-to-Source Voltage (V)
Negative I
D
, Drain Current (A)
80 µs Pulse Test
V
GS
= - 10, - 8 V
- 6 V
- 5 V
- 7 V
15
12
0
3
6
9
5
0
2520
1510
10
2
10
1
0
Negative V
GS
,
Gate-to-Source Voltage (V)
Negative I
D
, Drain Current (A)
90121_02
0.1
5
2
5
2
5
2
246
8
10
80 µs Pulse Test
V
DS
= 2 x V
GS
T
J
= 25 °C
T
J
= 150 °C
Negative I
D
, Drain Current (A)
Negative V
DS
,
Drain-to-Source Voltage (V)
5
90121_03
80 µs Pulse Test
- 4 V
V
GS
= - 10
- 6 V
- 5 V
- 7 V
- 8 V
15
12
0
3
6
9
1
0
4
32
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
Negative V
DS
, Drain-to-Source Voltage (V)
Negative I
D
, Drain Current (A)
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
3
10
2
2
5
0.1
2
5
1
2
5
10
2
5
25
110
25
10
2
90121_04
DC
IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22
IRF9Z20, SiHF9Z20
IRF9Z22, SiHF9Z22