Datasheet

ManualsBrandsVISHAY ManualsFETsIRF9Z20PBF, MOSFET

Document Number: 90121 www.vishay.com

S11-0511-Rev. B, 21-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRF9Z20, SiHF9Z20

Vishay Siliconix

FEATURES

• P-Channel Versatility

• Compact Plastic Package

•Fast Switching

• Low Drive Current

• Ease of Paralleling

• Excellent Temperature Stability

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

The Power MOSFET technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of the Power MOSFET

design achieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

The P-channel Power MOSFET’s are designed for

application which require the convenience of reverse

polarity operation. They retain all of the features of the more

common N-channel Power MOSFET’s such as voltage

control, very fast switching, ease of paralleling, and

excellent temperature stability.

P-channel Power MOSFETs are intended for use in power

stages where complementary symmetry with N-channel

devices offers circuit simplification. They are also very useful

in drive stages because of the circuit versatility offered by

the reverse polarity connection. Applications include motor

control, audio amplifiers, switched mode converters, control

circuits and pulse amplifiers.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

b. V

= - 25 V, starting T

= 25 °C, L =100 μH, R

= 25 

c. 0.063" (1.6 mm) from case.

PRODUCT SUMMARY

(V) - 50

DS(on)

()V

= - 10 V 0.28

(Max.) (nC) 26

(nC) 6.2

(nC) 8.6

Configuration Single

P-Channel MOSFET

TO-220AB

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

IRF9Z20PbF

SiHF9Z20-E3

SnPb

IRF9Z20

SiHF9Z20

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

- 50

Gate-Source Voltage V

± 20

Continuous Drain Current V

at - 10 V

= 25 °C

- 9.7

= 100 °C - 6.1

Pulsed Drain Current

- 39

Linear Derating Factor 0.32 W/°C

Inductive Current, Clamped L = 100 μH I

- 39 A

Unclamped Inductive Current (Avalanche Current) I

- 2.2 A

Maximum Power Dissipation T

= 25 °C P

40 W

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (8 pages)

PAGE 1
IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 50 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.
PAGE 2
IRF9Z20, SiHF9Z20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 80 Case-to-Sink, Flat, Greased Surface RthCS 1.0 - Maximum Junction-to-Case (Drain) RthJC - 3.1 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = - 250 μA - 50 - - V VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V IGSS VGS = ± 20 V - - ± 500 nA VDS = max.
PAGE 3
IRF9Z20, SiHF9Z20 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS = - 10, - 8 V 15 80 µs Pulse Test Negative ID, Drain Current (A) Negative ID, Drain Current (A) 15 -7V 12 9 -6V 6 -5V 3 -4V 0 5 10 15 20 12 -7V 9 -6V 6 -5V 3 -4V 25 Negative VDS, Drain-to-Source Voltage (V) 90121_01 102 Negative ID, Drain Current (A) 10 5 2 1 5 TJ = 150 °C TJ = 25 °C 2 4 6 2 IRF9Z20, SiHF9Z20 IRF9Z22, SiHF9Z22 102 5 10 µs 2 100 µs 10 Negative VGS, Gate-to-Sour
PAGE 4
IRF9Z20, SiHF9Z20 Vishay Siliconix gfs,Transconductance (S) 80 µs Pulse Test VDS < - 50 V BVDSS, Drain-to-Source Breakdown Voltage (Normalized) 5.0 TJ = 25 °C 4.0 TJ = 150 °C 3.0 2.0 1.0 0.0 0 4 8 12 Negative ID, Drain Current (A) 90121_06 1.15 1.05 0.95 0.85 5 2 10 TJ = 150 °C 5 TJ = 25 °C 2 1 5 2 0.1 0 90121_07 2 4 6 8 10 Negative VSD, Source-to-Drain Voltage (V) Fig. 6 - Typical Source-Drain Diode Forward Voltage www.vishay.com 4 Fig. 7 - Breakdown Voltage vs.
PAGE 5
IRF9Z20, SiHF9Z20 1000 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgs Cgd / (Cgs + Cgd) ≈ Cds + Cgd C, Capacitance (pF) 800 600 Ciss 400 Coss 200 Crss 0 2 1 5 2 10 5 1.2 0.4 VGS = - 20 V 0.0 16 24 32 40 Fig. 11 - Typical On-Resistance vs. Drain Current 10 VSD = - 40 V 12 8 4 For test circuit see figure 17 0 16 24 32 Fig. 10 - Typical Gate Charge vs.
PAGE 6
IRF9Z20, SiHF9Z20 Vishay Siliconix Fig. 13b - Unclamped Inductive Load Test Waveforms Fig. 13a - Unclamped Inductive Test Circuit Thermal Response (ZthJC) 10 D = 0.5 1 0.2 0.1 PDM 0.05 0.1 0.02 0.01 t1 Single Pulse (Thermal Response) t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 10-5 10-4 90121_05 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration Fig.
PAGE 7
IRF9Z20, SiHF9Z20 Vishay Siliconix Random Failure Rate (FIT) 14 V 1010 Time (H) 16 V 108 18 V 106 20 V 104 60 % UCL 103 0.1 90 % UCL 99 % UCL 102 10-2 20 FIT’s 10 10-3 1 102 50 90121_18 1 104 1012 70 90 110 130 50 150 Temperature (°C) Fig. 17 - Typical Time to Accumulated 1 % Gate Failure 90121_19 70 90 110 130 10-4 150 Temperature (°C) Fig. 18 - Typical High Temperature Reverse Bias (HTRB) Failure Rate Vishay Siliconix maintains worldwide manufacturing capability.
PAGE 8
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.