Datasheet

www.vishay.com Document Number: 91089
6 S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
500
0
100
200
300
400
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Energy (mJ)
Bottom
To p
I
D
- 2.7 A
- 4.7 A
- 6.7 A
V
DD
= - 25 V
91089_12c
25 150
125
10075
50
175
Q
GS
Q
GD
Q
G
V
G
Charge
- 10 V
D.U.T.
- 3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-