Datasheet

Document Number: 91089 www.vishay.com
S11-1052-Rev. C, 30-May-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
91089_01
20 µs Pulse Width
T
C
= 25 °C
- 4.5 V
- V
DS
, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
10
0
10
1
10
1
10
0
10
-1
Bottom
To p
V
GS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
10
-1
10
1
10
0
10
-1
10
0
10
1
- V
DS
,
Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
Bottom
To p
V
GS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
20 µs Pulse Width
T
C
= 175 °C
91089_02
- 4.5 V
10
-1
20 µs Pulse Width
V
DS
= - 25 V
10
1
10
0
10
-1
- I
D
, Drain Current (A)
- V
GS
,
Gate-to-Source Voltage (V)
56 78 910
4
25 °C
175 °C
91089_03
I
D
= - 6.7 A
V
GS
= - 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91089_04
- 60 - 40- 20 0 20 40 60
80
100 120140 160
180