Datasheet
www.vishay.com Document Number: 91089
2 S11-1052-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRF9Z14, SiHF9Z14 data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
a
R
thJA
-40
°C/W
Maximum Junction-to-Case (Drain) R
thJC
-3.5
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= - 250 μA - 60 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= - 1 mA
c
- - 0.06 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 μA - 2.0 - - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= - 60 V, V
GS
= 0 V - - - 100
μA
V
DS
= - 48 V, V
GS
= 0 V, T
J
= 150 °C - - - 500
Drain-Source On-State Resistance R
DS(on)
V
GS
= - 10 V I
D
= - 4.0 A
b
--0.5
Forward Transconductance g
fs
V
DS
= - 25 V, I
D
= - 4.0 A
c
1.4 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
c
- 270 -
pFOutput Capacitance C
oss
- 170 -
Reverse Transfer Capacitance C
rss
-31-
Total Gate Charge Q
g
V
GS
= - 10 V
I
D
= - 6.7 A, V
DS
= - 48 V,
see fig. 6 and 13
b, c
--12
nC Gate-Source Charge Q
gs
--3.8
Gate-Drain Charge Q
gd
--5.1
Turn-On Delay Time t
d(on)
V
DD
= - 30 V, I
D
= - 6.7 A,
R
g
= 24 , R
D
= 4.0 , see fig. 10
b
-11-
ns
Rise Time t
r
-63-
Turn-Off Delay Time t
d(off)
-10-
Fall Time t
f
-31-
Internal Source Inductance L
S
Between lead, and center of die contact - 7.5 - nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--- 6.7
A
Pulsed Diode Forward Current
a
I
SM
--- 27
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= - 6.7 A, V
GS
= 0 V
b
--- 5.5V
Drain-Source Body Diode Characteristics
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= - 6.7 A, dI/dt = 100 A/μs
b, c
- 80 160 ns
Body Diode Reverse Recovery Charge Q
rr
- 96 190 nC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G