Datasheet
IRF9640, SiHF9640
www.vishay.com
Vishay Siliconix
S16-0754-Rev. C, 02-May-16
2
Document Number: 91086
For technical questions, contact: hvm@vishay.com
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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.50 -
Maximum Junction-to-Case (Drain) R
thJC
-1.0
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -200 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= -1 mA - -0.2 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -2.0 - -4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= -200 V, V
GS
= 0 V - - -100
μA
V
DS
= -160 V, V
GS
= 0 V, T
J
= 125 °C - - -500
Drain-Source On-State Resistance R
DS(on)
V
GS
= -10 V I
D
= -6.6 A
b
- - 0.50
Forward Transconductance g
fs
V
DS
= -50 V, I
D
= -6.6 A
b
4.1 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= -25 V,
f = 1.0 MHz, see fig. 5
- 1200 -
pFOutput Capacitance C
oss
- 370 -
Reverse Transfer Capacitance C
rss
-81-
Total Gate Charge Q
g
V
GS
= -10 V
I
D
= -11 A, V
DS
= -160 V,
see fig. 6 and 13
b
--44
nC Gate-Source Charge Q
gs
--7.1
Gate-Drain Charge Q
gd
--27
Turn-On Delay Time t
d(on)
V
DD
= -100 V, I
D
= -11 A
R
g
= 9.1 , R
D
= 8.6, see fig. 10
b
-14-
ns
Rise Time t
r
-43-
Turn-Off Delay Time t
d(off)
-39-
Fall Time t
f
-38-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Gate Input Resistance R
g
f = 1 MHz, open drain 0.3 - 1.7
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p -n junction diode
---11
A
Pulsed Diode Forward Current
a
I
SM
---44
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= -11 A, V
GS
= 0 V
b
---5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= -11 A, dI/dt = 100 A/μs
b
- 250 300 ns
Body Diode Reverse Recovery Charge Q
rr
-2.93.6μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G