Datasheet

ManualsBrandsVISHAY ManualsFETsIRF9630SPBF, MOSFET

Document Number: 91085

www.vishay.com

S11-1051-Rev. C, 30-May-11 1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRF9630S, SiHF9630S

Vishay Siliconix

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

•Fast Switching

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D

PAK (TO263) is a surface mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

PAK (TO263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= - 50 V, starting T

= 25 °C, L = 17 mH, R

= 25 , I

= - 6.5 A (see fig. 12).

c. I

 - 6.5 A, dI/dt  120 A/μs, V

 V

, T

 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

(V) - 200

DS(on)

()V

= - 10 V 0.80

(Max.) (nC) 29

(nC) 5.4

(nC) 15

Configuration Single

P-Channel MOSFET

PAK (TO-263)

ORDERING INFORMATION

Package D

PAK (TO263) D

PAK (TO263)

Lead (Pb)-free and Halogen-free SiHF9630S-GE3 SiHF9630STRL-GE3

Lead (Pb)-free

IRF9630SPbF IRF9630STRLPbF

SiHF9630S-E3 SiHF9630STL-E3

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

- 200

Gate-Source Voltage V

± 20

Continuous Drain Current V

at - 10 V

= 25 °C

- 6.5

= 100 °C - 4.0

Pulsed Drain Current

- 26

Linear Derating Factor 0.59

W/°C

Linear Derating Factor (PCB Mount)

0.025

Single Pulse Avalanche Energy

500 mJ

Avalanche Current

- 6.4 A

Repetiitive Avalanche Energy

7.4 mJ

Maximum Power Dissipation T

= 25 °C

Maximum Power Dissipation (PCB Mount)

= 25 °C 3.0

Peak Diode Recovery dV/dt

dV/dt - 5.0 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRF9630S, SiHF9630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC - 200 RDS(on) () VGS = - 10 V 0.80 Qg (Max.) (nC) 29 Qgs (nC) 5.
PAGE 2
IRF9630S, SiHF9630S Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - 62 Maximum Junction-to-Ambient (PCB Mount)a RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRF9630S, SiHF9630S Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V - ID, Drain Current (A) 101 - 4.5 V 100 - ID, Drain Current (A) Top 101 100 20 µs Pulse Width TC = 25 °C 10-1 10-1 100 20 µs Pulse Width VDS = - 50 V 101 4 - VDS, Drain-to-Source Voltage (V) 91085_01 20 µs Pulse Width TC = 150 °C 10-1 10-1 91085_02 - 4.5 V 100 101 - VDS, Drain-to-Source Voltage (V) Fig.
PAGE 4
IRF9630S, SiHF9630S 1200 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 1000 800 Ciss 600 400 Coss 200 Crss - ISD, Reverse Drain Current (A) Vishay Siliconix 101 150 °C 100 0 100 101 2 - ID, Drain Current (A) - VGS, Gate-to-Source Voltage (V) Operation in this area limited by RDS(on) 5 VDS = - 160 V VDS = - 100 V VDS = - 40 V 8 4 102 5 10 µs 2 10 100 µs 5 1 ms 2 1 10 ms TC = 25 °C TJ = 150 °C Single Pulse 5 For test circuit se
PAGE 5
IRF9630S, SiHF9630S Vishay Siliconix RD VDS VGS 7.0 D.U.T. Rg +VDD - ID, Drain Current (A) 6.0 - 10 V 5.0 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 4.0 Fig. 10a - Switching Time Test Circuit 3.0 2.0 td(on) 1.0 td(off) tf tr VGS 0.0 10 % 25 50 75 100 125 150 TC, Case Temperature (°C) 91085_09 90 % VDS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 t2 Notes: 1.
PAGE 6
IRF9630S, SiHF9630S Vishay Siliconix L Vary tp to obtain required IAS IAS VDS Rg VDS D.U.T. + V DD VDD IAS tp - 10 V 0.01 Ω tp VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 1200 ID - 2.9 A - 4.1 A Bottom - 6.5 A Top 1000 800 600 400 200 0 VDD = - 50 V 25 91085_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T.
PAGE 7
IRF9630S, SiHF9630S Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg + • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.
PAGE 8
Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN.
PAGE 9
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