Datasheet

www.vishay.com Document Number: 91082
6 S11-0512-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620, SiHF9620
Vishay Siliconix
Fig. 18a - Basic Gate Charge Waveform Fig. 18b - Gate Charge Test Circuit
Fig. 19 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91082
.
Q
GS
Q
GD
Q
G
V
G
Charge
- 15 V
D.U.T.
- 3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
P.W.
Period
dI/dt
Diode recovery
dV/dt
Body diode forward drop
Body diode forward
current
Driver gate drive
Inductor current
D =
P.W.
Period
+
-
-
-
-
+
+
+
Peak Diode Recovery dV/dt Test Circuit
• dV/dt controlled by R
g
• D.U.T. - device under test
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
R
g
• Compliment N-Channel of D.U.T. for driver
V
DD
• I
SD
controlled by duty factor “D”
Note
Note
a. V
GS
= - 5 V for logic level and - 3 V drive devices
V
GS
= - 10 V
a
D.U.T. l
SD
waveform
D.U.T. V
DS
waveform
V
DD
Re-applied
voltage
Ripple ≤ 5 %
I
SD
Reverse
recovery
current