Datasheet

Document Number: 91082 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620, SiHF9620
Vishay Siliconix
Fig. 12 - Typical On-Resistance vs. Drain Current
Fig. 13 - Maximum Drain Current vs. Case Temperature
Fig. 14 - Power vs. Temperature Derating Curve
Fig. 15 - Clamped Inductive Test Circuit
Fig. 16 - Clamped Inductive Waveforms
Fig. 17a - Switching Time Test Circuit
Fig. 17b - Switching Time Waveforms
91082_12
I
D
, Drain Current (A)
R
DS(on)
, Drain-to-Source
R
DS(on)
measured with current
pulse of 2.0 µs duration. Initial
T
J
= 25 °C. (Heating effect of
2.0 µs pulse is minimal.)
0
1
2
3
4
5
0 - 20- 16- 8- 4 - 12
On Resistance (Ω)
V
GS
= - 10 V
V
GS
= - 20 V
150
Negative I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
0.0
1.5
2.0
2.5
3.0
3.5
25
91082_13
1251007550
1.0
0.5
T
C
, Case Temperature (°C)
P
D
, Power Dissipation (W)
40
35
20
0
5
0 20 100806040
91082_14
140
120
30
25
15
10
0.05 Ω
D.U.T.
L
V
DS
+
-
V
DD
V
GS
= - 10 V
Var y t
p
to obtain
required I
L
t
p
V
DD
= 0.5 V
DS
E
C
= 0.75 V
DS
E
C
I
L
V
DD
V
DS
t
p
E
C
I
L
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
- 10 V
+
-
V
DS
V
DD
V
GS
10 %
90 %
V
DS
t
d(on)
t
r
t
d(off)
t
f