Datasheet

Document Number: 91082 www.vishay.com
S11-0512-Rev. B, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9620, SiHF9620
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Typical Saturation Characteristics
Fig. 4 - Maximum Safe Operating Area
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
91082_01
80 µs Pulse Test
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
- 10
- 5
V
GS
= - 10, - 9, - 8, - 7 V
- 4 V
- 6 V
- 5 V
- 4
0
- 1
- 2
- 3
0
- 50- 40
- 30- 20
91082_02
V
GS
, Gate-to-Source Voltage (V)
I
D
, Drain Current (A)
- 2
- 5
- 4
0
- 1
- 2
- 3
0
- 10- 8
- 6- 4
80 µs Pulse Test
V
DS
> I
D(on)
x R
DS(on)
max.
T
J
= - 55 °C
T
J
= 25 °C
T
J
= 125 °C
91082_03
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
- 1
- 5
- 4
0
- 1
- 2
- 3
0
- 5- 4
- 3- 2
80 µs Pulse Test
V
GS
= - 10, - 9, - 8, - 7 V
- 4 V
- 6 V
- 5 V
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
Negative V
DS
, Drain-to-Source Voltage (V)
Negative I
D
, Drain Current (A)
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
2
2
5
0.1
1
2
5
10
2
5
25
110
25
10
2
10
3
25
91082_04
2.0
1.0
0.1
10
-5
10
-4
10
-3
10
-2
0.1 1.0 10
P
DM
t
1
t
2
t
1
, Square Wave Pulse Duration (s)
Z
thJC
(t)/R
thJC
, Normalized Effective Transien
Notes:
1. Duty Factor, D = t
1
/t
2
2. Per Unit Base = R
thJC
= 3.12 °C/W
3. T
JM
- T
C
= P
DM
Z
thJC
(t)
Single Pulse (Transient
Thermal Impedence)
0.2
0.05
0.02
0.01
91082_05
0.1
D = 0.5
0.5
0.2
0.05
0.02
0.01
25 25 25 25 25 25
Thermal Impedence (Per Unit)