Datasheet

ManualsBrandsVISHAY ManualsFETsIRF9620PBF, MOSFET P channel -3.5A -200V

Document Number: 91082 www.vishay.com

S11-0512-Rev. B, 21-Mar-11 1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

IRF9620, SiHF9620

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• P-Channel

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. I

 - 3.5 A, dI/dt  95 A/μs, V

 V

, T

 150 °C.

c. 1.6 mm from case.

PRODUCT SUMMARY

(V) - 200

DS(on)

()V

= - 10 V 1.5

(Max.) (nC) 22

(nC) 12

(nC) 10

Configuration Single

P-Channel MOSFET

TO-220AB

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

IRF9620PbF

SiHF9620-E3

SnPb

IRF9620

SiHF9620

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

- 200

Gate-Source Voltage V

± 20

Continuous Drain Current V

at - 10 V

= 25 °C

- 3.5

= 100 °C - 2.0

Pulsed Drain Current

- 14

Linear Derating Factor 0.32 W/°C

Maximum Power Dissipation T

= 25 °C P

40 W

Peak Diode Recovery dV/dt

dV/dt - 5.0 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (8 pages)

PAGE 1
IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V • P-Channel 1.5 Available RoHS* Qg (Max.
PAGE 2
IRF9620, SiHF9620 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 3.1 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA - 200 - - V VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.
PAGE 3
IRF9620, SiHF9620 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) -5 -5 80 µs Pulse Test -4 ID, Drain Current (A) ID, Drain Current (A) VGS = - 10, - 9, - 8, - 7 V -6V -3 -2 -5V -1 VGS = - 10, - 9, - 8, - 7 V -4 -3 -6V -2 -5V -1 80 µs Pulse Test -4V -4V 0 0 - 20 - 10 0 - 30 - 40 - 50 VDS, Drain-to-Source Voltage (V) 91082_01 Negative ID, Drain Current (A) ID, Drain Current (A) 102 TJ = 25 °C TJ = 125 °C -3 -2 -1 80 µs Pulse Test VDS > ID(on) x RDS(on)
PAGE 4
IRF9620, SiHF9620 RDS(on), Drain-to-Source On Resistance (Normalized) Vishay Siliconix 4.0 gfs,Transconductance (S) 80 µs Pulse Test VDS > ID(on) x RDS(on) max. 3.2 TJ = - 55 °C 2.4 TJ = 25 °C TJ = 125 °C 1.6 0.8 0.0 0 -1 -2 -3 -4 -5 ID, Drain Current (A) 91082_06 2.0 1.5 1.0 0.5 0.0 - 40 40 80 120 160 TJ, Junction Temperature (°C) 500 - 10 Ciss C, Capacitance (pF) 400 -5 -2 - 1.0 0 Fig. 9 - Normalized On-Resistance vs. Temperature - 20 TJ = 150 °C TJ = 25 °C - 0.
PAGE 5
IRF9620, SiHF9620 Vishay Siliconix L RDS(on), Drain-to-Source On Resistance (Ω) 5 Vary tp to obtain required IL RDS(on) measured with current pulse of 2.0 µs duration. Initial TJ = 25 °C. (Heating effect of 2.0 µs pulse is minimal.) 4 VGS = - 10 V V DD + D.U.T. tp EC 0.05 Ω VGS = - 10 V 3 VDS IL VDD = 0.5 VDS EC = 0.75 VDS Fig. 15 - Clamped Inductive Test Circuit 2 VGS = - 20 V 1 VDD 0 0 -4 -8 - 12 - 16 - 20 IL ID, Drain Current (A) 91082_12 tp Fig.
PAGE 6
IRF9620, SiHF9620 Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG - 15 V 0.2 µF 12 V 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 18a - Basic Gate Charge Waveform Fig. 18b - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit D.U.T.
PAGE 7
Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.
PAGE 8
Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.