Datasheet

ManualsBrandsVISHAY ManualsFETsIRF9610SPBF, MOSFET

IRF9610S, SiHF9610S

www.vishay.com

Vishay Siliconix

S12-1558-Rev. D, 02-Jul-12

Document Number: 91081

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Power MOSFET

FEATURES

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

•P-Channel

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

Note

* Lead (Pb)-containing terminations are not RoHS-compliant.

Exemptions may apply.

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D

PAK (TO-263) is a surface mount power package

capable of accommodating die sizes up to HEX-4. It

provides the highest power capability and the lowest

possible on-resistance in any existing surface mount

package. The D

PAK (TO-263) is suitable for high current

applications because of its low internal connection

resistance and can dissipate up to 2 W in a typical surface

mount application.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).

b. I

 - 1.8 A, dI/dt  70 A/μs, V

 V

, T

 150 °C.

c. 1.6 mm from case.

d. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

(V) - 200

DS(on)

()V

= - 10 V 3

(Max.) (nC) 11

(nC) 7

(nC) 4

Configuration Single

P-Channel MOSFET

PAK (TO-263)

ORDERING INFORMATION

Package D

PAK (TO-263)

Lead (Pb)-free and Halogen-free

SiHF9610S-GE3

SiHF9610STRR-GE3

SiHF9610STRL-GE3

Lead (Pb)-free

IRF9610SPbF

SiHF9610S-E3

IRF9610STRRPbF

IRF9610STRLPbF

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

- 200

Gate-Source Voltage V

± 20

Continuous Drain Current V

at - 10 V

= 25 °C

- 1.8

= 100 °C - 1

Pulsed Drain Current

- 7

Linear Derating Factor 0.16

W/°C

Linear Derating Factor (PCB Mount)

0.025

Maximum Power Dissipation T

= 25 °C

Maximum Power Dissipation (PCB Mount)

= 25 °C 3

Peak Diode Recovery dV/dt

dV/dt - 5 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Summary of content (10 pages)

PAGE 1
IRF9610S, SiHF9610S www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • - 200 RDS(on) () VGS = - 10 V 3 Qg (Max.) (nC) 11 Qgs (nC) 7 Qgd (nC) 4 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements Material categorization: For definitions of compliance please see www.vishay.
PAGE 2
IRF9610S, SiHF9610S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - 62 Maximum Junction-to-Ambient (PCB Mount)a RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 6.4 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRF9610S, SiHF9610S www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) - 2.40 - 2.40 -7V VGS = - 10, - 9, - 8 V VGS = - 10, - 9, - 8, - 7 V - 1.92 - 1.44 ID, Drain Current (A) ID, Drain Current (A) - 1.92 -6V - 0.96 -5V - 0.48 - 1.44 - 0.96 -5V - 0.48 80 µs Pulse Test 80 µs Pulse Test -4V -4V 0.00 0.00 - 10 0 - 30 - 20 - 40 - 50 -2 0 VDS, Drain-to-Source Voltage (V) 91081_01 102 TJ = 25 °C TJ = 125 °C - 0.96 - 0.
PAGE 4
IRF9610S, SiHF9610S www.vishay.com 2.0 gfs,Transconductance (S) 80 µs Pulse Test VDS > ID(on) x RDS(on) max. 1.6 TJ = - 55 °C 1.2 TJ = 25 °C TJ = 125 °C 0.8 0.4 0.0 0 - 0.48 - 0.96 - 1.44 - 1.92 2.5 ID = - 0.6 A VGS = - 10 V 2.0 1.5 1.0 0.5 0.0 - 40 - 2.40 ID, Drain Current (A) 91081_06 RDS(on), Drain-to-Source On Resistance (Normalized) Vishay Siliconix 91081_09 Fig. 6 - Typical Transconductance vs. Drain Current 0 40 500 C, Capacitance (pF) ID, Drain Current (A) - 1.
PAGE 5
IRF9610S, SiHF9610S www.vishay.com 7 20 5 PD, Power Dissipation (W) RDS(on) measured with current pulse of 2.0 µs duration. Initial TJ = 25 °C. (Heating effect of 2.0 µs pulse is minimal.) 6 RDS(on), Drain-to-Source On Resistance (Ω) Vishay Siliconix VGS = - 10 V 4 3 VGS = - 20 V 2 1 15 10 5 0 0 0 -1 -2 -3 -4 -5 -6 ID, Drain Current (A) 91081_12 0 -7 20 Fig. 12 - Typical On-Resistance vs. Drain Current 40 60 80 100 120 140 TC, Case Temperature (°C) 91081_14 Fig.
PAGE 6
IRF9610S, SiHF9610S www.vishay.com Vishay Siliconix RD VDS QG - 10 V VGS D.U.T. Rg QGS +VDD QGD VG - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Charge Fig. 17a - Switching Time Test Circuit Fig. 18a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. td(on) tr td(off) tf VGS 50 kΩ 12 V 0.2 µF 0.3 µF 10 % - D.U.T. 90 % VDS + VDS VGS - 3 mA IG ID Current sampling resistors Fig. 17b - Switching Time Waveforms S12-1558-Rev. D, 02-Jul-12 Fig.
PAGE 7
IRF9610S, SiHF9610S www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg + • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T.
PAGE 8
Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN.
PAGE 9
AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.
PAGE 10
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