Datasheet

ManualsBrandsVISHAY ManualsFETsIRF9610PBF, MOSFET

Document Number: 91080 www.vishay.com

S09-0046-Rev. A, 19-Jan-09 1

Power MOSFET

IRF9610, SiHF9610

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• P-Channel

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

The Power MOSFETs technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of the Power MOSFETs

design achieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).

b. Not applicable.

c. I

≤ - 1.8 A, dI/dt ≤ 70 A/µs, V

≤ V

, T

≤ 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

(V) - 200

DS(on)

(Ω)V

= - 10 V 3.0

(Max.) (nC) 11

(nC) 7.0

(nC) 4.0

Configuration Single

P-Channel MOSFET

TO-220

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package TO-220

Lead (Pb)-free

IRF9610PbF

SiHF9610-E3

SnPb

IRF9610

SiHF9610

ABSOLUTE MAXIMUM RATINGS T

= 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

- 200

Gate-Source Voltage V

± 20

Continuous Drain Current V

at - 10 V

= 25

- 1.8

= 100

- 1.0

Pulsed Drain Current

- 7.0

Linear Derating Factor 0.16 W/°C

Maximum Power Dissipation T

= 25 °C P

20 W

Inductive Current, Clamp I

- 7.0 A

Peak Diode Recovery dV/dt

dV/dt - 5.0 V/ns

Operating Junction and Storage Temperature Range T

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Summary of content (9 pages)

PAGE 1
IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 11 Qgs (nC) 7.0 Qgd (nC) 4.0 Configuration • P-Channel 3.0 RoHS* • Ease of Paralleling COMPLIANT • Simple Drive Requirements • Lead (Pb)-free Available Single DESCRIPTION S The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors.
PAGE 2
IRF9610, SiHF9610 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 6.4 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = - 250 µA - 200 - - V ΔVDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.23 - V/°C VGS(th) VDS = VGS, ID = - 250 µA - 2.
PAGE 3
IRF9610, SiHF9610 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted - 2.40 - 2.40 -7V VGS = - 10, - 9, - 8 V VGS = - 10, - 9, - 8, - 7 V - 1.92 - 1.44 ID, Drain Current (A) ID, Drain Current (A) - 1.92 -6V - 0.96 -5V - 0.48 80 µs Pulse Test - 1.44 - 0.96 -5V - 0.48 80 µs Pulse Test -4V -4V 0.00 0.00 - 10 0 - 30 - 20 - 40 0 - 50 VDS, Drain-to-Source Voltage (V) 91080_01 Negative ID, Drain Current (A) TJ = 25 °C TJ = 125 °C - 0.96 - 0.
PAGE 4
IRF9610, SiHF9610 2.0 gfs,Transconductance (S) 80 µs Pulse Test VDS > ID(on) x RDS(on) max. 1.6 TJ = - 55 °C 1.2 TJ = 25 °C TJ = 125 °C 0.8 0.4 0.0 0 - 0.48 - 0.96 - 1.44 - 1.92 2.5 ID = - 0.6 A VGS = - 10 V 2.0 1.5 1.0 0.5 0.0 - 40 - 2.40 ID, Drain Current (A) 91080_06 RDS(on), Drain-to-Source On Resistance (Normalized) Vishay Siliconix 40 500 C, Capacitance (pF) ID, Drain Current (A) 400 TJ = 150 °C TJ = 25 °C - 0.5 - 4.4 - 5.6 - 6.8 0.95 0.
PAGE 5
IRF9610, SiHF9610 Vishay Siliconix 7 5 Negative ID, Drain Current (A) 6 RDS(on), Drain-to-Source On Resistance (Ω) 2.0 RDS(on) measured with current pulse of 2.0 µs duration. Initial TJ = 25 °C. (Heating effect of 2.0 µs pulse is minimal.) VGS = - 10 V 4 3 VGS = - 20 V 2 1 1.6 1.2 0.8 0.4 0 0.0 -1 0 -2 -3 -4 -5 -6 ID, Drain Current (A) 91080_12 50 25 -7 100 125 150 TC, Case Temperature (°C) 91080_13 Fig. 12 - Typical On-Resistance vs. Drain Current 75 Fig.
PAGE 6
IRF9610, SiHF9610 Vishay Siliconix RD VDS QG 15 V VGS D.U.T. RG QGS +VDD QGD VG - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Charge Fig. 17a - Switching Time Test Circuit Fig. 18a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. td(on) tr td(off) tf VGS 50 kΩ 12 V 0.2 µF 0.3 µF 10 % - D.U.T. 90 % VDS + VDS VGS - 3 mA IG ID Current sampling resistors Fig. 17b - Switching Time Waveforms www.vishay.com 6 Fig.
PAGE 7
IRF9610, SiHF9610 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T.
PAGE 8
Package Information www.vishay.com Vishay Siliconix TO-220-1 MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.14 4.70 0.163 0.185 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.73 0.045 0.068 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 0.43 1.40 0.017 0.055 H(1) 6.10 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.
PAGE 9
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