Datasheet

Document Number: 91080 www.vishay.com
S09-0046-Rev. A, 19-Jan-09 5
IRF9610, SiHF9610
Vishay Siliconix
Fig. 12 - Typical On-Resistance vs. Drain Current Fig. 13 - Maximum Drain Current vs. Case Temperature
Fig. 14 - Power vs. Temperature Derating Curve
Fig. 15 - Clamped Inductive Test Circult Fig. 16 - Clamped Inductive Waveforms
91080_12
I
D
, Drain Current (A)
R
DS(on)
, Drain-to-Source
7
R
DS(on)
measured with current pulse of
2.0 µs duration. Initial T
J
= 25 °C.
(Heating effect of 2.0 µs pulse is minimal.)
6
0
1
2
3
4
5
0
- 7
- 6
- 1
- 2 - 3 - 4
- 5
On Resistance (Ω)
V
GS
= - 10 V
V
GS
= - 20 V
150
Negative I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
0.0
0.4
0.8
1.2
1.6
2.0
25
91080_13
1251007550
T
C
, Case Temperature (°C)
P
D
, Power Dissipation (W)
20
15
10
0
5
0 20 100806040
91080_14
140
120
0.05 Ω
D.U.T.
L
V
DS
+
-
V
DD
V
GS
= - 10 V
Vary t
p
to obtain
required I
L
t
p
V
DD
= 0.5 V
DS
E
C
= 0.75 V
DS
E
C
I
L
V
DD
V
DS
t
p
E
C
I
L