Datasheet
www.vishay.com Document Number: 91077
2 S11-1051-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9530S, SiHF9530S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/W
Maximum Junction-to-Ambient
(PCB Mount)
a
R
thJA
-40
Maximum Junction-to-Case (Drain) R
thJC
-1.7
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= - 250 μA - 100 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= - 1 mA - - 0.10 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 μA - 2.0 - - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= - 100 V, V
GS
= 0 V - - - 100
μA
V
DS
= - 80 V, V
GS
= 0 V, T
J
= 150 °C - - - 500
Drain-Source On-State Resistance R
DS(on)
V
GS
= - 10 V I
D
= - 7.2 A
b
- - 0.30
Forward Transconductance g
fs
V
DS
= - 50 V, I
D
= - 7.2 A
b
3.7 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
- 860 -
pFOutput Capacitance C
oss
- 340 -
Reverse Transfer Capacitance C
rss
-93-
Total Gate Charge Q
g
V
GS
= - 10 V
I
D
= - 12 A, V
DS
= - 80 V,
see fig. 6 and 13
b
--38
nC Gate-Source Charge Q
gs
--6.8
Gate-Drain Charge Q
gd
--21
Turn-On Delay Time t
d(on)
V
DD
= - 50 V, I
D
= - 12 A,
R
G
= 12 , R
D
= 3.9 , see fig. 10
b
-12-
ns
Rise Time t
r
-52-
Turn-Off Delay Time t
d(off)
-31-
Fall Time t
f
-39-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--- 12
A
Pulsed Diode Forward Current
a
I
SM
--- 48
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= - 12 A, V
GS
= 0 V
b
--- 6.3V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= - 12 A, dI/dt = 100 A/μs
b
- 120 240 ns
Body Diode Reverse Recovery Charge Q
rr
- 0.46 0.92 μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G