Datasheet

www.vishay.com Document Number: 91072
6 S09-0017-Rev. A, 19-Jan-09
IRF9510, SiHF9510
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
25 150
125
10075
50
700
0
200
300
400
500
600
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Energy (mJ)
Bottom
To p
I
D
- 1.6 A
- 2.8 A
- 4.0 A
V
DD
= - 25 V
91072_12c
100
175
Q
GS
Q
GD
Q
G
V
G
Charge
- 10 V
D.U.T.
- 3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-