Datasheet

www.vishay.com Document Number: 91066
6 S11-1050-Rev. D, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanche Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
91066_12c
1000
0
200
400
600
800
25 150
125
10075
50
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Avalanche Energy (mJ)
1200
Bottom
To p
I
D
3.6 A
5.1 A
8.0 A
600
570
580
590
0.0 5.04.03.02.01.0
I
AV
, Avalanche Current (A)
V
DSav
, Avalanche Voltage (V)
610
6.0
91066_12d
540
550
560
Q
GS
Q
GD
Q
G
V
G
Charge
10 V
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-