Datasheet

Document Number: 91066 www.vishay.com
S11-1050-Rev. D, 30-May-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
91066_09
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
0.0
2.0
4.0
8.0
6.0
25 1501251007550
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
g
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.1 1
91066_11
Thermal Response (Z
thJC
)
t
1
, Rectangular Pulse Duration (s)
10
1
0.1
10
-2
10
-4
10
-3
10
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
Single Pulse
(Thermal Response)
10
-5
A
R
g
I
AS
0.01 Ω
t
p
D.U.T.
L
V
DS
+
-
V
DD
Driver
15 V
20 V
I
AS
V
DS
t
p